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  6.26a Datasheet PDF File

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    ADPOW[Advanced Power Technology]
Part No. APTM50H14FT3
OCR Text ...tp://www.advancedpower.com 1-6 APTM50H14FT3 - Rev 0 September, 2004 Max ratings 500 26 18 105 30 140 208 35 30 1300 Unit V A ...26A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 26A R G = 5 Inductive switching @ 25C VGS ...
Description Full - Bridge MOSFET Power Module

File Size 317.67K  /  6 Page

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    VCAS121016J390 VCAS120626D580 VCAS060316B400 VCAS060318A400 VCAS120618E380 VCAS120616K380 VCAS120618A400 VCAS120618D400

AVX Corporation
Part No. VCAS121016J390 VCAS120626D580 VCAS060316B400 VCAS060318A400 VCAS120618E380 VCAS120616K380 VCAS120618A400 VCAS120618D400 VCAS120618D400RP VCAS060326A580 VCAS080526A580 VCAS080526C580 VCAS080518C400 VCAS040218X400 VCAS080518A400 VCAS121026H560 VCAS121018J390
OCR Text ...380 _ _ 16 11 22.010% 38 1 15 0.6 200 930 k 27.5 0.010 vcas121016j390 _ _ 16 11 25.510% 42 5 10 1.5 500 3100 k 27.5 0.030 vcas040218x400 _ _...26a - 550 mhz 30a - 665 mhz 100 1000 10000 frequency (mhz) insertion los (db) 10 0603 case size 5 0 ...
Description TransGuard Automotive Series

File Size 667.66K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. BSS87
OCR Text ...duct Summary VDS RDS(on) ID 240 6 0.26 P-SOT89-4-1 1 2 3 V W A 2 VPS05558 Type BSS87 Package P-SOT89-4-2 Ordering Code Q67...26A, V DS=192V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD...
Description SIPMOS Small-Signal-Transistor

File Size 185.87K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFB38N20DPBF IRFSL38N20D IRFS38N20D
OCR Text ... for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 44 32 180 3.8 320 2.1 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*...26A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VG...
Description HEXFET Power MOSFET

File Size 272.67K  /  11 Page

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    MagnaChip Semiconductor...
Part No. MDU1517 MDU1517RH
OCR Text ...6a 2.5 2.9 m t j =125 o c 3.6 4.2 v gs =4.5v,i d =21a 3.7 4.4 forwardtransconductance g fs v ds =5v,i d =10a 46 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =26a, v gs =10v 31.1 41.5 51.9 nc totalga...
Description    Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm)

File Size 745.89K  /  6 Page

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    ADVANCED POWER ELECTRONICS CORP
Part No. AP4435GH AP4435GJ
OCR Text ...ating rohs-compliant product 44.6 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -30 + ...26a - - 20 m ? v gs =-4.5v, i d =-16a - - 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-...
Description 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 212.62K  /  6 Page

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    SANYO
Part No. 2SK3705
OCR Text ...1 10 1.2 28 40 9.0 12 12.5 17 2.6 typ max Unit V A A V S m m Continued on next page. Any and all SANYO products described or conta...26A RL=1.15 18.1 D PW=10s D.C.1% VOUT 5.6 14.0 1.6 1.2 0.75 2.4 0.7 P.G G ...
Description High Output MOSFETs

File Size 42.76K  /  5 Page

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