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  6a-peak Datasheet PDF File

For 6a-peak Found Datasheets File :: 7458    Search Time::1.656ms    
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    SKB02N6007

Infineon Technologies AG
Part No. SKB02N6007
OCR Text ...IC, COLLECTOR CURRENT 10A 8A 6A 4A 2A 0A 10Hz T C =110C T C =80C IC, COLLECTOR CURRENT 15 s 1A 50 s 200 s 0.1A 1ms DC Ic ...PEAK RATE OF FALL 180A/s 3A IF = 4A IF = 2A IF = 1A OF REVERSE RECOVERY CURRENT Irr, RE...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,149.10K  /  13 Page

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    IRFR9N20D IRFR9N20DTR IRFR9N20DTRR IRFR9N20DTRL IRFU9N20D

International Rectifier
Part No. IRFR9N20D IRFR9N20DTR IRFR9N20DTRR IRFR9N20DTRL IRFU9N20D
OCR Text ...CCC CCC s v ds = 50v, i d = 5.6a q g total gate charge CCC 18 27 i d = 5.6a q gs gate-to-source charge CCC 4.7 7.1 nc ...peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal respo...
Description 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package

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    BU2520AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520AF
OCR Text ... 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.6 0.1 1 IC / A 10 100 Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C Fig.10. Typical base-emitter saturation...
Description Silicon Diffused Power Transistor

File Size 79.05K  /  8 Page

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    BU2520AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520AW
OCR Text ... 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.1 1 IC / A 10 0.6 100 Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C Fig.10. Typical base-emitter saturation...
Description Silicon Diffused Power Transistor

File Size 81.55K  /  7 Page

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    BU2520AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520AX
OCR Text ... 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.6 0.1 1 IC / A 10 100 Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C Fig.10. Typical base-emitter saturation...
Description Silicon Diffused Power Transistor

File Size 81.12K  /  8 Page

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    BU2520A

NXP Semiconductors
Philips Semiconductors
Part No. BU2520A
OCR Text ...= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 16 kHz BU2520A ts IC = 6A 5A tf 0.1 1 IB / A 10 Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V BU...
Description Silicon Diffused Power Transistor

File Size 56.16K  /  7 Page

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    BU2520DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2520DF
OCR Text ...= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 IC = 6A 5A tf 0.1 1 IB / A 10 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V Tj = 25 C Tj = 125 C Fig.10. Typical collector storage and fall tim...
Description Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 68.50K  /  7 Page

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    BU2520DW

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2520DW
OCR Text ... 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.1 0.6 1 IC / A 10 100 Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Fig.7. Typical base-emitter saturation voltage. VBEsat = f (I...
Description Silicon Diffused Power Transistor(纭???e?????朵?绠?
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247

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    BU2520DX

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BU2520DX
OCR Text ...= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 IC = 6A 5A tf 0.1 1 IB / A 10 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V Tj = 25 C Tj = 125 C Fig.10. Typical collector storage and fall tim...
Description Silicon Diffused Power Transistor(纭???e?????朵?绠?

File Size 70.63K  /  7 Page

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    BU2520D

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520D
OCR Text ... 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.1 0.6 1 IC / A 10 100 Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Fig.7. Typical base-emitter saturation voltage. VBEsat = f (I...
Description Silicon Diffused Power Transistor

File Size 49.01K  /  6 Page

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For 6a-peak Found Datasheets File :: 7458    Search Time::1.656ms    
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