|
|
 |
NTE[NTE Electronics]
|
Part No. |
NTE184 NTE185
|
OCR Text |
.... . . . . . . . . . . . . . . . 80v Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...5a, VCE = 2V IC = 4A, VCE = 2V Collector-Emitter Saturation Voltage IC = 1.5a, IB = 0.15a IC = 4A, I... |
Description |
Silicon Complementary Transistors Audio Power Amp, Switch Silicon Complementary Transistors Audio Power Amp / Switch
|
File Size |
21.55K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Advanced Power Electronics
|
Part No. |
AP18T10GP-HF-3
|
OCR Text |
...in-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss ga...5a - 10 16 nc q gs gate-source charge v ds =80v - 2.5 - nc q gd gate-drain ("miller") charge v gs =1... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
File Size |
83.92K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Cystech Electonics Corp...
|
Part No. |
MTB011N10RQ8 MTB011N10RQ8-0-T3-G
|
OCR Text |
... v gs = 2 20v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 7.5 11 v gs =10v, i d =11.5a *r ds(on) - 9.8 14 m v gs =4.5v, i d =9.5a dynamic qg *1, 2 - 69.2 - qgs *1, ... |
Description |
N-Channel Enhancement Mode Power MOSFET
|
File Size |
430.07K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Inchange Semiconductor ...
|
Part No. |
BUX77
|
OCR Text |
...ng voltage- : v ceo(sus) = 80v(min) applications designed for use in switching regulators and general purpose power amplifiers...5a; i b = 0.5a 1.0 v v be( on ) base-emitter on voltage i c = 5a; i b = 0.5a 1.3 v i ce... |
Description |
isc Silicon NPN Power Transistor
|
File Size |
207.34K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|