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				齐纳二极 http:// KEC Holdings KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
Part No.	Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4.7V Z02W6.2V Z02W6.8V Z02W7.5V Z02W8.2V Z02W9.1V Z02W5.6V Z02W2.7V Z02W5.1V Z02W2.0V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V Z02W16V Z02W18V Z02W2.2V Z02W2.4V Z02W20V Z02W22V Z02W24V
OCR Text	...5.0 5 30 5 500 0.5 1 3.0 5 40 5 900 0.5 1 2.5 Iz (mA) Dynamic Impedance Zz ( ) MAX. Iz (mA) KNEE Dynamic Impedance Zzk ( ) MAX. Iz (mA) Reverse Current IR( A) MAX. VR(V) 2001. 7. 9 Revision No : 4 3/5 Z02W2.0V~24V ELECTRICAL Ch...
Description	Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管） RES,ChIP,1K,1/16W,5%,0402 ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Z02W2.0V
File Size	87.77K / 5 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	AN48800A
OCR Text	...) Unit : mm 1 0.95 0.95 1.900.20 2.90+0.20 -0.05 2.80+0.20 -0.30 AN48800A Absolute Maximum Ratings Parameter Supply voltage O...h VOL IOh ICCAVE VCC = 3 V VCC = 3 V Conditions Min 0.5 Typ 0.1 10 Max 6 0.3 10 ...
Description	Low current consumption, high sensitivity CMOS hall IC One-way magnetic field operation
File Size	255.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	... = 10V MIN TYP MAX UNIT 4410 900 69 110 29 50 15 13 32 7 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time ...h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 pla...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...s 12 A/s 052-6257 Rev A 900 600 APT50GF120JRD Vr D.U.T. 30h trr/Qrr Waveform +15v diF /dt Adjust 0v -15v 1 2 3 4 IF...h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 ...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	...12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GATE ChARGE (nC) FIGURE 12, GATE ChARGES vs GATE-TO-SOURCE VOLTAGE 0 0 1 0....h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 pla...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	...12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GATE ChARGE (nC) FIGURE 12, GATE ChARGES vs GATE-TO-SOURCE VOLTAGE 0 0 1 0....h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 pla...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	...0 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time...h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 pla...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...0 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...h=4.8 (.187) h=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex Nut M4 (4 pla...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				Diodes Inc. DIODES[Diodes Incorporated]
Part No.	BC847A-7 BC847AT BC847B-7 BC847C-7 BC847BT BC847CT BC847A BC847B BC847C
OCR Text	...yp -- 150 270 -- 290 520 -- 700 900 660 -- -- -- -- -- Max -- -- -- 220 450 800 250 600 -- 700 770 15 5.0 -- 4.5 10 4.0 Unit Test Condition NEW PRODUCT Characteristic DC Current Gain (Note 3) Current Gain A B C Current Gain A B C Coll...
Description	high Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-SOIC -55 to 125 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	56.50K / 3 Page	View it Online	Download Datasheet

For 900 h Found Datasheets File :: 18061 Search Time::1.297ms
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