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For behavior Found Datasheets File :: 7134    Search Time::1.453ms    
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    MTP8N06 MTP8N06E

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP8N06 MTP8N06E
OCR Text ...WER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

File Size 212.56K  /  8 Page

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    MTSF1P02HD ON2655

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTSF1P02HD ON2655
OCR Text ...WER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system

File Size 342.01K  /  12 Page

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    MTW33N10E ON2695

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTW33N10E ON2695
OCR Text ...WER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system

File Size 227.85K  /  8 Page

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    MTY25N60E MTY25N60E_D ON2716

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTY25N60E MTY25N60E_D ON2716
OCR Text ...WER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
From old datasheet system

File Size 236.67K  /  8 Page

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    MTY30N50E ON2718 MTY30N50E_D MTY30N50

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTY30N50E ON2718 MTY30N50E_D MTY30N50
OCR Text ...WER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

File Size 237.69K  /  8 Page

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    NTMD2C02R2

ONSEMI[ON Semiconductor]
Part No. NTMD2C02R2
OCR Text ...OWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can...
Description Power MOSFET 2 Amps / 20 Volts
Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual

File Size 117.29K  /  16 Page

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    NTP35N15

ONSEMI[ON Semiconductor]
Part No. NTP35N15
OCR Text ... capacitance curve at Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge a voltage corresponding to the off-state condition when controlled. The lengths of various switching intervals (t) ...
Description Power MOSFET 37 Amps / 150 Volts
Power MOSFET 37 Amps, 150 Volts

File Size 73.92K  /  8 Page

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    NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D

ONSEMI[ON Semiconductor]
Part No. NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D
OCR Text ... capacitance curve at Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge a voltage corresponding to the off-state condition when controlled. The lengths of various switching intervals (t) ...
Description Power MOSFET 52 Amps, 100 Volts
Power MOSFET 52 Amps 100 Volts

File Size 72.62K  /  8 Page

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    NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G

ONSEMI[ON Semiconductor]
Part No. NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G
OCR Text ...OWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance ca...
Description Power MOSFET 60 Amps, 60 Volts
60 V, 60 A, N-Channel TO-220 and D2PAK
60 V, 60 A, N−Channel TO−220 and D2PAK
60 V / 60 A / N&Channel TO&220 and D2PAK

File Size 85.70K  /  10 Page

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    NTP85N03 NTB85N03 NTB85N03T4

ONSEMI[ON Semiconductor]
Part No. NTP85N03 NTB85N03 NTB85N03T4
OCR Text ...OWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance ca...
Description Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)

File Size 80.80K  /  12 Page

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For behavior Found Datasheets File :: 7134    Search Time::1.453ms    
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