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For calculating Found Datasheets File :: 3376 Search Time::2.938ms
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				ON Semi Motorola, Inc.
Part No.	MTB1306 MTB1306_D ON2393 ON2392
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 75 AMPERES 30 VOLTS From old datasheet system
File Size	172.51K / 8 Page	View it Online	Download Datasheet

				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MTB20N20E ON2400
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 20 AMPERES 200 VOLTS From old datasheet system
File Size	258.36K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
File Size	93.40K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD1302 MTD1302_D ON2464 ON2463
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 20 AMPERES 30 VOLTS From old datasheet system
File Size	201.67K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD3055V1 MTD3055VT4 MTD3055V MTD3055V-D
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Power MOSFET 12Amps, 60 Volts
File Size	81.46K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
File Size	84.57K / 12 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055VL MTD3055VL_D ON2500
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	209.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055V MTD3055V_D ON2501
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM From old datasheet system
File Size	205.70K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTDF1N02HD ON2522 ON2521
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM From old datasheet system
File Size	215.97K / 12 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3376 Search Time::2.938ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |