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				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTD6N10E ON2512 MTD6N10E-D
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM From old datasheet system
File Size	211.15K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP27N06 NTB27N06 NTB27N06T4
OCR Text	... by current from the generator. complicate the analysis. The inductance of the MOSFET The published capacitance data is difficult to use for source lead, inside the package and in the circuit wiring calculating rise and fall because drain-g...
Description	Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	83.26K / 12 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MTV10N100E
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
File Size	163.06K / 10 Page	View it Online	Download Datasheet

				Elantec Semiconductor
Part No.	EL4083 EL4083C EL4083CN
OCR Text	...ionships These dependencies can complicate and or limit the usefulness of this pin as a computational input The IZ dependence of the impedance of the multiplying inputs can be particularly troublesome See the IZ divider and the RMS 2 circui...
Description	Current Mode Four Quadrant Multiplier
File Size	251.72K / 16 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	EL4083 EL4083CS EL4083CN
OCR Text	...onships. These dependencies can complicate and/or limit the usefulness of this pin as a computational input. The IZ dependence of the impedance of the multiplying inputs can be particularly troublesome. See the IZ divider and the RMS#2 circ...
Description	Current Mode Four Quadrant Multiplier
File Size	162.15K / 14 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MTDF2N06HD_D ON2527
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	DUAL TMOSPOWER MOSFET 1.5 AMPERES 60 VOLTS From old datasheet system
File Size	183.63K / 10 Page	View it Online	Download Datasheet

				APLUS[Apuls Intergrated Circuits] Aplus Integrated Circuits Inc. Aplus Intergrated Circuits
Part No.	AVXX32E-B AV8732E AV6532E AV3232E AV2132 AV2132E AV4332E
OCR Text	... 21, 32, 43, 65 and 87 Seconds complicate Pure Speech Features Operating voltage: 2.4V~5.0V One single-key can implement play-all, play-next and random function. Maximum play count is 32. 4-column inputs and 3-row outputs can implement 4...
Description	21/ 32/ 43/ 65 and 87 Seconds complicate Pure Speech 21, 32, 43, 65 and 87 Seconds complicate Pure Speech 2123587秒复杂纯语音 ER 4C 4#16 PIN PLUG 212357秒复杂纯语音 21, 32, 43, 65 and 87 Seconds complicate Pure Speech 212357秒复杂纯语音
File Size	336.03K / 11 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MTB36N06E_D ON2415
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 36 AMPERES 60 VOLTS From old datasheet system
File Size	237.27K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc ON Semi
Part No.	MTB36N06V_D ON2417 MTB36N06V
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	From old datasheet system TMOS POWER FET 32 AMPERES 60 VOLTS
File Size	241.45K / 10 Page	View it Online	Download Datasheet

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