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  doped Datasheet PDF File

For doped Found Datasheets File :: 817    Search Time::0.938ms    
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    PGE60803 ERICSSON-PGE60803

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PGE60803 ERICSSON-PGE60803
OCR Text doped Fiber Amplifier for Digital Applications Key Features * Operating wavelength window: 15301560 nm * Saturation output power: +16 dBm * Noise figure, typ. <7.0 dB * Serial (RS-232) interface with parallel alarms Applications * S...
Description Erbium-doped Fiber Amplifier for Digital Applications

File Size 244.95K  /  4 Page

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    MURB1520 MURB1520-1 MUR1520 MURB1520TRL MURB1520TRR

IRF[International Rectifier]
http://
Part No. MURB1520 MURB1520-1 MUR1520 MURB1520TRL MURB1520TRR
OCR Text ...anar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters...
Description 200V 15A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package
200V 15A HEXFRED Discrete Diode in a TO-262 package
From old datasheet system
Ultrafast Rectifier

File Size 579.86K  /  8 Page

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    NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-CA NX7660JC NX8501

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-CA NX7660JC NX8501
OCR Text ...ptical isolator for an EDFA (Er doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high ef...
Description 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块

File Size 59.75K  /  8 Page

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    IRF[International Rectifier]
Part No. 8ETH03 8ETH03S 8ETH03-1
OCR Text ...anar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters ...
Description    Ultrafast Rectifier
300V 8A Ultra-Fast Discrete Diode in a TO-262 package
300V 8A Ultra-Fast Discrete Diode in a D2-Pak (UltraFast) package

File Size 197.91K  /  8 Page

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    30EPH03

IRF[International Rectifier]
Part No. 30EPH03
OCR Text ...anar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters ...
Description 300V 30A Ultra-Fast Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast Rectifier

File Size 174.46K  /  7 Page

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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL40309
OCR Text ...om active devices to the highly doped semiconductor substrate and package ground. Key features. * * * * * * * * 27 dBm output power 25 dB small signal gain 50 % Power Added Efficiency Simple logic on/off power control Battery charging c...
Description 3.6 V Differential Power Amplifier for DECT Telecommunications system

File Size 84.19K  /  6 Page

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