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List of Unclassifed Manufacturers
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| Part No. |
9161
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| OCR Text |
... 3+21( :::&dslwdo$gydqfhg&rp )$;21'(0$1' )2,/ 02',),&$7,216 (;3$1' 9(56$7,/,7< )2,/ 02',),&$7,216 (;3$1' 9(56$7,/,7< 7\slfdo ri pdq\ 6xuierdugv duh odujh sdg duhdv zklfk zklfk pd\ eh prglilhg wr fuhdwh ... |
| Description |
ACCEPTS ONE 14 OR 16-PIN S.O.I.C. or TWO 8-PIN SOICs PERIPHERAL BREADBOARDING AREA
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| File Size |
153.95K /
1 Page |
 View
it Online |
Download Datasheet
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Fairchild Semiconductor, Corp.
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| Part No. |
IRF830A
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| OCR Text |
...er r ds(on) : 1.169 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case case-to-sink junction-to-ambient r q jc r q cs r q ja c/w characteristic max. units symbol typ. features absolute maximum ratings drain-to-source v... |
| Description |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为1.5Ω，漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
220.19K /
7 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
IRF840S
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| OCR Text |
...er r ds(on) : 0.638 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case junction-to-ambient junction-to-ambient r q jc r q ja r q ja c/w characteristic max. units symbol typ. features d 2 -pak 1. gate 2. drain 3. source... |
| Description |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为0.85Ω，漏电流A N沟道功率MOSFET（不适用沟道增强型功率马鞍山场效应管（漏源电压为500V及导通电阻为0.85Ω，漏电流A）条
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| File Size |
233.78K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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