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  high collector-emitter voltage Datasheet PDF File

For high collector-emitter voltage Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    New Jersey Semi-Conductor Products, Inc.
Part No. 2N6413
Description collector-emitter voltage

File Size 177.67K  /  2 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 2N5109
Description collector-emitter SUSTAINING voltage

File Size 100.69K  /  1 Page

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    TLP2301

Toshiba Semiconductor
Part No. TLP2301
Description collector-emitter voltage - 40 V (min)

File Size 304.81K  /  11 Page

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    PS2707 PS2707-1 PS2707-1-V PS2707-2 PS2707-2-V PS2707-4 PS2707-4-V PS2707-1-V-E4-A PS2707-1-V-E3

NEC Corp.
NEC[NEC]
Part No. PS2707 PS2707-1 PS2707-1-V PS2707-2 PS2707-2-V PS2707-4 PS2707-4-V PS2707-1-V-E4-A PS2707-1-V-E3
Description AC INPUT RESPONSE high COLLECTOR TO EMITTER voltage TYPE SOP MULTI PHOTOCOUPLER SERIES
1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER

File Size 93.85K  /  12 Page

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    SMBT2222AE6327HTSA1

Infineon Technologies AG
Part No. SMBT2222AE6327HTSA1
Description Low collector-emitter saturation voltage

File Size 530.62K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. BC847S KC847S
Description Low collector-emitter saturation voltage

File Size 49.33K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. KSC2881
Description collector-emitter voltage : VCEO=120V

File Size 99.72K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. KCP56-16
Description Low collector-emitter saturation voltage

File Size 57.53K  /  1 Page

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    MJE18004D2 MJE18004D2-D

ON Semiconductor
Part No. MJE18004D2 MJE18004D2-D
Description high Speed, high Gain Bipolar NPN Power Transistor with Integrated collector-emitter Diode and Built-in Efficient Antisaturation ...
high Speed, high Gain Bipolar NPN Power Transistor with Integrated collector-emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS

File Size 197.57K  /  12 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SJ621 2SJ621-T2B 2SJ621-T1B
Description RF Bipolar Transistor; Collector Emitter voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET

File Size 71.11K  /  8 Page

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