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http:// FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDU8876 FDD8876 FDD8876NL
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OCR Text |
...es
* rDS(ON) = 8.2m VGS = 10V, ID = 35A , * rDS(ON) = 10m, VGS = 4.5V, ID = 35A * High performance trench technology for extremely low rDS(ON) * Low gate charge
Applications
* DC/DC converters
* High power and current handling capab... |
Description |
N-Channel PowerTrench MOSFET 30V N-Channel PowerTrench MOSFET
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File Size |
205.80K /
11 Page |
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
FDU8874 FDD8874
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OCR Text |
...* r DS(ON) = 5.1m, V GS = 10 V, ID = 35A * r DS(ON) = 6.4m, V GS = 4.5V, I D = 35A * High performance trench technology for extremely low r DS(ON) * Low gate charge
Applications
* DC/DC converters
* High power and current handling ca... |
Description |
N-Channel PowerTrench MOSFET 30V/ 116A N-Channel PowerTrench MOSFET 30V, 116A 35 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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File Size |
130.72K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDD5810
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OCR Text |
...S(ON) = 20.5m (Typ.), VGS = 5V, ID = 35A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse / Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Motor / Body Load Control ABS... |
Description |
N-Channel PowerTrench? MOSFET 60V, 35A, 27mOhm N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm
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File Size |
215.25K /
7 Page |
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Intersil
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Part No. |
FSPJ260F FSPJ260R FN4879
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OCR Text |
.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...35A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source... |
Description |
N-Channel Power MOSFETs N-Channel Power MOSFETs From old datasheet system
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File Size |
82.94K /
8 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
BSP88
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OCR Text |
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Product Summary VDS RDS(on) ID 240 6 0.35
SOT-223
4
V W A
3 2 1
VPS05163
Type BSP88
Package SOT-223
Ordering Code Q670...35A, V DS=192V, di/dt=200A/s, Tjmax=150C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD... |
Description |
SIPMOS Small-Signal-Transistor
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File Size |
185.08K /
8 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP MICROSEMI[Microsemi Corporation]
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Part No. |
APTM10TDUM19PG
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OCR Text |
ID = 70A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS V(R) MOS...35A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 250 1000 21 4 100
Unit A m V nA
Dynamic Ch... |
Description |
Triple dual common source MOSFET Power Module
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File Size |
284.34K /
7 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF76423P3T
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OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....35A, VGS = 10V (Figures 9, 10) ID = 23A, VGS = 5V (Figure 9) ID = 22A, VGS = 4.5V (Figure 9) THERMAL... |
Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 36A条(丁)|63AB N-Channel NexFET Power MOSFET 8-SON -55 to 150 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
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File Size |
357.80K /
9 Page |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APTM10TAM19FPG
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OCR Text |
ID = 70A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
...35A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 250 1000 21 4 100
Unit A m V nA
Dynamic Ch... |
Description |
Triple phase leg MOSFET Power Module
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File Size |
283.82K /
6 Page |
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it Online |
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