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j-die Datasheet PDF File

For j-die Found Datasheets File :: 18369 Search Time::1.578ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4T1G164QM-ZCD5 K4T1G044QM K4T1G044QM-ZCCC K4T1G044QM-ZCD5 K4T1G084QM-ZCCC K4T1G084QM-ZCD5 K4T1G164QM-ZCCC
OCR Text	...VSSQ VREF CKE VSS E F G H J K L M N P R T U V VSSQ DQS VDDQ DQ2 VSSDL RAS CAS A2 A6 A11 NC DQS VSSQ DQ0 VSSQ CK CK CS A0 A4 A8 A...die DDR2 SDRAM DDR2 SDRAM x8 package pinout (Top View) : 68ball FBGA Package(60balls + 8balls ...
Description	1Gb M-die DDR2 SDRAM Specification
File Size	454.35K / 29 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
OCR Text	...y MCP MEMORY A B C D E F G H J K L M N P DNU DNU DNU DNU DNU DNU DNU DNU ADVf NC CLKf NC Vccu A...die 7 Revision 1.0 November 2004 K5L5628JT(B)M Table 1. PRODUCT LINE-UP Synchronous/Burst...
Description	256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
File Size	1,565.84K / 98 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	BYV52HR
OCR Text	... finish eppl i f(av) v rrm t j(max) v f (max) byv52-200fsy1 - engineering model gold - 30 a 200 v 150 c 1.15 v byv52-200fsyhrb 5103...die byv52200fsy1 + beo 10 g - strip pack byv52-200fsyhrb 5103/030/01 solder dip 510303001 + beo y...
Description	Aerospace 30 A - 200 V fast recovery rectifier
File Size	63.39K / 8 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	MSAFA1N100D01
OCR Text	...e avalanche energy tbd mj t j, t stg operating and storage: junction temperature range -55 to 150 c symbol characteristic / t...die for implantable cardio defibrillator applications dynamic characteristics: repe...
Description	Fast MOSFET Die for Implantable Cardio Defibrillator Applications
File Size	156.07K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXMC3AM832 ZXMC3AM832TA ZXMC3AM832TC
OCR Text	....7 13.0 0.95 V ns nC T J =25C, I S =1.7A, V GS =0V T J =25C, I F =2.5A, di/dt= 100A/s (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction tempera...
Description	MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
File Size	276.58K / 10 Page	View it Online	Download Datasheet

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