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IMP Inc IMP[IMP, Inc] IMP Inc
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Part No. |
C1210
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OCR Text |
...e Sidewall spacer Contact Drain ldd
n+
N-well contact
p+
Poly gate Source
p+
Drain
n+ p
p+
p- substrate contact Channel stop
Field Oxide
Sidewall spacer Bottom poly Poly gate Contact
p
N-well
p-epi p+ substra... |
Description |
Process C1210 CMOS 1.2mm Zero Threshold Devices
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File Size |
33.75K /
4 Page |
View
it Online |
Download Datasheet |
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IMP[IMP, Inc]
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Part No. |
C1004
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OCR Text |
...nel stop
Contact
Drain
ldd
p
p
VGS = -3.0V
-3.0
VGS = -2.0V 0 -1.0 -2.0 -3.0 -4.0 -5.0
0
Drain Voltage (V) VDS P-ch Transistor IV Characteristics of a 20/1.2 device
18
C1004-4-98
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Description |
Process C1004
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File Size |
30.83K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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