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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTB4N80E_D ON2428 ON2426 MTB4N80E
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| OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
| Description |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
191.71K /
10 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
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| Part No. |
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
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| OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
| Description |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
206.08K /
8 Page |
View
it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTP75N03HDL MTP75N03HDL_D ON2641
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| OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
| Description |
OSCILLATORS 100PPM -10 70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS
From old datasheet system
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| File Size |
235.16K /
8 Page |
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it Online |
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