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  mhz-895 Datasheet PDF File

For mhz-895 Found Datasheets File :: 1611    Search Time::1.781ms    
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    MC100EP14 MC100EP14D MC100EP14DT MC100EP14DTR2

ONSEMI[ON Semiconductor]
Part No. MC100EP14 MC100EP14D MC100EP14DT MC100EP14DTR2
OCR Text ...1.0 1.5 2.0 FREQUENCY (MHz) Figure 2. Fmax/Jitter Q Driver Device Q Zo = 50 W D Receiver Device Zo = 50 W 50 W 50 W D VTT VTT = VCC - 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluati...
Description 3.3V / 5V 1:5 Differential ECL/PECL/HSTL Clock Driver 100E SERIES, LOW SKEW CLOCK DRIVER, 5 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20

File Size 67.05K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BYW29EX-200
OCR Text ...tance from both terminals f = 1 mhz - 10 - pf to external heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th ...895 v i f = 8 a - 0.92 1.05 v i f = 20 a - 1.1 1.3 v i r reverse current v r = v rwm ; t j = 100...
Description Ultrafast power diode BYW29EX-200<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;

File Size 120.42K  /  8 Page

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    MC100EP58DR2 MC10EP58DTR2 MC100EP58 MC100EP58D MC100EP58DT MC100EP58DTR2 MC10EP58D MC10EP58DR2 MC10EP58DT MC10EP58-D

ONSEMI[ON Semiconductor]
Part No. MC100EP58DR2 MC10EP58DTR2 MC100EP58 MC100EP58D MC100EP58DT MC100EP58DTR2 MC10EP58D MC10EP58DR2 MC10EP58DT MC10EP58-D
OCR Text ... (JITTER) 4000 FREQUENCY (MHz) Figure 2. Fmax/Jitter http://onsemi.com EE EE EE MC10EP58, MC100EP58 Q Driver Device Qb 50 W 50 W D Receiver Device Db V TT V TT = V CC - 2.0 V Figure 3. Typical Termination for O...
Description 3.3V / 5V ECL 2:1 Multiplexer

File Size 69.69K  /  8 Page

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    NB100LVEP224NBSP NB100LVEP224FA NB100LVEP224FAR2 NB100LVEP224 NB100LVEP224/D

ONSEMI[ON Semiconductor]
Part No. NB100LVEP224NBSP NB100LVEP224FA NB100LVEP224FAR2 NB100LVEP224 NB100LVEP224/D
OCR Text ...ut Voltage (Figure 3) fout < 50 MHz fout < 0.8 GHz fout < 1.0 GHz CLKx-Qx CLK_SELx-Qx Within-Device Skew (Note 16) Device-to-Device Skew (Note 17) Random Clock Jitter (Figure 3) (RMS) Input Swing (Differential) (Note 19) (Figure 5) OE Set U...
Description 2.5V/3.3V 1:24 Differential ECL/PECL Clock Driver with Clock Select and Output Enable

File Size 96.16K  /  10 Page

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    NB100LVEP91

ON Semiconductor
Part No. NB100LVEP91
OCR Text ...14) Output Rise/Fall Times @ 50 MHz (20% - 80%) Q, Q 200 75 fin v 1.0 GHz fin v 1.5 GHz fin v 2.0 GHz Differential Single-Ended Min 575 525 300 375 300 Typ 800 750 600 500 450 15 25 50 0.5 20 800 150 600 650 75 95 125 2.0 Max Min 600 525 25...
Description Any Level Positive Input to -2.5 V/-3.3 V LVNECL Output Translator

File Size 168.90K  /  10 Page

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    BYQ28-100 BYQ28-150 BYQ28-200

Philips Semiconductors
Part No. BYQ28-100 BYQ28-150 BYQ28-200
OCR Text ...tance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resista...895 1.10 1.25 0.2 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated S...
Description Rectifier diodes ultrafast

File Size 36.50K  /  6 Page

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    MHVIC915R2

Freescale Semiconductor, Inc
Part No. MHVIC915R2
OCR Text ...akes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base ...895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps PAE IRL ...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 474.16K  /  14 Page

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    Hitachi
Part No. PF0031
OCR Text ... PF0031: For NMT900 890 to 925 MHz Features * High stability: Load VSWR 20:1 * Low power control current: 400 A * Thin package: 5 mm t...895 900 905 910 10 915 Frequency f (MHz) Pout, T, VSWR (in) vs. Frequency 6 20 Pin = ...
Description MOS FET Power Amplifier Module

File Size 81.81K  /  13 Page

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    NE25339 NE25339-T1 NE25339-U78

Duracell
NEC Corp.
NEC[NEC]
Part No. NE25339 NE25339-T1 NE25339-U78
OCR Text ... * HIGH GPS: 20 dB (TYP) AT 900 MHz * LOW NF: 1.1 dB TYP AT 900 MHz * LG1 = 1.0 m, LG2 = 1.5 m, WG = 800 m * ION IMPLANTATION * AVAILABLE IN...895 -10 3 0.0294 0.005 0.8 1.636 -2 -10 1.47 1 3 1.47 3 FET2 0.07 1.0e9 0.16e-12 0 0 1 0.0394 0.06 0...
Description GENERAL PURPOSE DUAL-GATE GaAs MESFET

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    TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
Part No. TGF2021-04-SD
OCR Text ...ct description key features 900 mhz low noise application board performance dc-4 ghz packaged power phemt bias conditions: vd = 5 v, idq ...895 96.265 0.024 17.704 0.712 -173.53 0.5 0.919 -165.822 9.652 90.224 0.025 14.82 0.714 -177.448 0.6...
Description DC-4 GHz Packaged Power pHEMT 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

File Size 531.83K  /  16 Page

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