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IRF[International Rectifier]
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| Part No. |
IRHNB7460SE
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions SMD-3
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 25... |
| Description |
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
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| File Size |
240.33K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRHNJ67234 IRHNJ63234
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Te... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
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| File Size |
184.80K /
8 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNJ67C30 IRHNJ63C30
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Te... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
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| File Size |
186.69K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHQ57214SE
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-28
Q2
Q1 Q3 Q4 Q1
Q3
Q4 Q2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
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| File Size |
175.06K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRHSLNA58064 IRHSLNA53064 IRHSLNA54064 IRHSLNA57064
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
VDD = 25V, starting TJ = 25C, L= 0.13 mH
Peak IL = 75A, VGS = 12V
Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
Case Outli... |
| Description |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 75A条（丁）|贴片
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| File Size |
111.15K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHY57133CMSE JANSR2N7488T3 IRHY57133CMSE-15
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
172.08K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHY57230CMSE JANSR2N7489T3
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford S... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
171.83K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHY67C30CM IRHY63C30CM
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
193.94K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHYB67230CM IRHYB63230CM
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-257AA ( Tabless)
6 %%Ab#!d #!Ab# d $'Ab!d #'"Ab (d
(!Ab#"d #!Ab# d
7
!
"
8
& Ab!'d H6Y $''Ab%!$d !&Ab$d... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
132.17K /
8 Page |
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it Online |
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International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
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| Part No. |
IRHYK57133CMSE IRHYK57133CMSEPBF
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low Ohmic TO-257AA
0.13 [.005] A 10.66 [.420] 10.42 [.410] 5.08 [.200] 4.83 [.190]
C 1 2 3
10.92 [.430] 10.42 [.410]
B 15.49 ... |
| Description |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
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| File Size |
187.12K /
8 Page |
View
it Online |
Download Datasheet |
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