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Philips
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| Part No. |
BUX86P BUX86P_87P_1
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| OCR Text |
...ith heatsink compound and 30 5 newton force on the centre of the envelope.
1 0.001
0.01 IC / A
0.1
1
Fig.8. Typical DC current gain. hFE = f(IC); parameter VCE
hFE 1000 VCE=5V Tj= -40 C
BUX86P Typical gain Limit gain
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| Description |
Silicon Diffused Power Transistor
From old datasheet system
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| File Size |
37.77K /
6 Page |
 View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
Philips
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| Part No. |
BUJ303B BUJ303B_1 BUJ303B127
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| OCR Text |
...ith heatsink compound and 30 5 newton force on the centre of the envelope.
Fig.14. Reverse bias safe operating area Tj Tjmax
March 2002
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power T... |
| Description |
Silicon Diffused Power Transistor
From old datasheet system
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| File Size |
51.28K /
7 Page |
View
it Online |
Download Datasheet |
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Philips
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| Part No. |
BUJ303A BUJ303A_3
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| OCR Text |
...ith heatsink compound and 30 5 newton force on the centre of the envelope.
6
5
4
3
2
1
0 0 200 400 600 800 1,000
1,200
VCE CLAMP/V
Fig.14. Reverse bias safe operating area Tj Tjmax
September 1998
5
R... |
| Description |
Silicon Diffused Power Transistor
From old datasheet system
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| File Size |
51.22K /
7 Page |
View
it Online |
Download Datasheet |
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Philips
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| Part No. |
BU1508DX
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| OCR Text |
...ith heatsink compound and 30 5 newton force on the centre of the envelope.
September 1997
5
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508DX
MECHANICAL DATA
Dimensio... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
47.25K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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