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For pluse Found Datasheets File :: 467    Search Time::1.75ms    
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    FGA90N33ATD

Fairchild Semiconductor
Part No. FGA90N33ATD
OCR Text ..., D<0.01, Pulse width<5usec *IC pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA90N33ATD Rev. A FGA90N33ATD 330V, 90A PDP Trench IGBT Package Marking and Ordering Information ...
Description 330V, 90A PDP Trench IGBT

File Size 636.89K  /  9 Page

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    FGA90N33AT

Fairchild Semiconductor
Part No. FGA90N33AT
OCR Text ..., D<0.01, Pulse width<5usec *IC pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA90N33AT Rev. A FGA90N33AT 330V, 90A PDP Trench IGBT Package Marking and Ordering Information D...
Description 330V, 90A PDP Trench IGBT

File Size 607.51K  /  8 Page

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    FGPF50N30T FGPF50N30TTU

Fairchild Semiconductor
Part No. FGPF50N30T FGPF50N30TTU
OCR Text ...e width=100usec , Duty=0.1 * IC_pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF50N30T Rev. A FGPF50N30T 300V, 50A PDP IGBT Package Marking and Ordering Information Device M...
Description Discrete IGBT
300V, 50A PDP IGBT

File Size 565.27K  /  7 Page

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    IRFZ44CN

Inchange Semiconductor Company Limited
Part No. IRFZ44CN
OCR Text ...Continuous Drain Current-Single pluse (tp10s) Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature VALUE 55 20 49 160 94 175 -55~175 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER T...
Description isc N-Channel MOSFET Transistor

File Size 99.82K  /  2 Page

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    SR104 SR106 SR105 SR103 SR102

MIC GROUP RECTIFIERS
Part No. SR104 SR106 SR105 SR103 SR102
OCR Text ... T j=75 C 0.1 Tj =25 C pluse Width=300uS 1%Duty Cycle 0.01 0.01 0.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0 T j=25 C INSTANTANEOUS FORWARD VOLT AGE,(V) 20 40 60 80 100 120 140 PERCENT OF RATED PEAK ...
Description SCHOTTKY BARRIER RECTIFIER

File Size 144.21K  /  2 Page

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    KMA2D3P20S

KEC(Korea Electronics)
Part No. KMA2D3P20S
OCR Text ...-1 0.1 0.05 0.02 0.01 Single pluse PDM t1 t2 10-2 10-5 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 102 103 10-4 Square Wave Pulse Duration (sec) 2007. 5. 30 Revision No : 2 4/5 KMA2D3P20S Fig10. Gate Char...
Description P-Ch Trench MOSFET

File Size 469.85K  /  5 Page

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    KMA2D4P20S

KEC(Korea Electronics)
Part No. KMA2D4P20S
OCR Text ... 0.5 0.2 0.1 PDM t1 t2 Single pluse 10-2 0.02 0.01 10-3 10-4 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-1 1 101 102 103 10-3 10-2 Square Wave Pulse Duration (sec) 2006. 4. 6 Revision No : 0 4/5 K...
Description P-Ch Trench MOSFET

File Size 414.30K  /  5 Page

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    FDP5N50F

Fairchild Semiconductor
Part No. FDP5N50F
OCR Text ...ance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D G GDS TO-220 FDP Series GD S TO-22...
Description N-Channel MOSFET, FRFET 500V, 4.5A, 1.55楼?

File Size 796.62K  /  10 Page

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    FDPF5N50 FDP5N50 FDPF5N50TYDTU FDP5N5007

Fairchild Semiconductor Corporation
Part No. FDPF5N50 FDP5N50 FDPF5N50TYDTU FDP5N5007
OCR Text ...ance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S TO-2...
Description N-Channel MOSFET 500V, 5A, 1.4Ω
N-Channel MOSFET 500V, 5A, 1.4楼?

File Size 258.09K  /  10 Page

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    LESD5Z7.0T1G

Leshan Radio Company
Part No. LESD5Z7.0T1G
OCR Text ...re 1. 1. VBR is measured with a pluse test current IT at an ambient temperature of 25 2/6 LESHAN RADIO COMPANY, LTD. LESD5Z7.0T1G Fig1. Pulse Waveform Fig3.Power Derating Application Note Electrostatic discharge (ESD) is a m...
Description Transient Voltage Suppressors for ESD Protection

File Size 522.47K  /  6 Page

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For pluse Found Datasheets File :: 467    Search Time::1.75ms    
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