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  sensitive-gate Datasheet PDF File

For sensitive-gate Found Datasheets File :: 14936    Search Time::1.406ms    
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    EIC0910-2

Excelics Semiconductor, Inc.
Part No. EIC0910-2
OCR Text ...l Resistance 3 Caution! ESD sensitive device. MIN 32.5 7.0 TYP 33.5 8.0 0.6 30 600 -43 -46 1000 -2.5 11 1250 -4.0 12 o MAX UNITS ...gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUT...
Description 9.50-10.50GHz 2-Watt Internally-Matched Power FET

File Size 176.91K  /  4 Page

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    RA60H4452M1 RA60H4452M1-101 RA60H4452M108

Mitsubishi Electric Semiconductor
Part No. RA60H4452M1 RA60H4452M1-101 RA60H4452M108
OCR Text SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For...gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output sign...
Description RF MOSFET MODULE 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 167.94K  /  9 Page

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    EIC1213-4

Excelics Semiconductor, Inc.
Part No. EIC1213-4
OCR Text ...l Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.0 6.5 0.6 28 1100 -42 1280 -44 2080 -2.5 5.5 2880 -4.0 6.0 o MAX ...gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUT...
Description 12.70-13.20GHz 4-Watt Internally-Matched Power FET

File Size 173.09K  /  4 Page

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    EIC1212-4

Excelics Semiconductor, Inc.
Part No. EIC1212-4
OCR Text ...l Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.5 6.5 MAX UNITS dBm dB 0.6 28 1100 -43 -46 2000 -2.5 5....gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUT...
Description 12.20-12.70 GHz 4-Watt Internally Matched Power FET

File Size 113.95K  /  2 Page

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    Dynex Semiconductor, Ltd.
DYNEX SEMICONDUCTOR LTD
Part No. DIM100CHS12-A000
OCR Text sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com replace february 2004 version, issu...gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa)...
Description 100 A, 1200 V, N-CHANNEL IGBT C, MODULE-7

File Size 135.95K  /  8 Page

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    Dynex Semiconductor, Ltd.
Part No. DIM100CHS12-E
OCR Text sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com pds5682-1.2 january 2004 features trench gate field stop technology low conduction losses low switching losses 10 s short circ...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 174.34K  /  8 Page

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    Dynex Semiconductor, Ltd.
Part No. DIM100CHS12-H000
OCR Text sensitive to electrostatic discharge. users should follow esd handling procedures. 1/7 www.dynexsemi.com ds5632-1.3 august 2003 features n...gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa)...
Description 100 A, 1200 V, N-CHANNEL IGBT C, 7 PIN

File Size 150.66K  /  7 Page

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    EIC8596-8 EIC8596-8NH

Excelics Semiconductor, Inc.
http://
Part No. EIC8596-8 EIC8596-8NH
OCR Text ...l Resistance 3 Caution! ESD sensitive device. MIN 38.5 6.5 TYP 39.5 7.5 0.6 30 2200 -40 -43 3700 -2.5 2.5 4300 -4.0 3.5 o MAX UNI...gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUT...
Description 8.50-9.60GHz 8-Watt Internally-Matched Power FET

File Size 179.83K  /  4 Page

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For sensitive-gate Found Datasheets File :: 14936    Search Time::1.406ms    
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