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    Winbond Electronics Corp
Winbond Electronics, Corp.
Part No. 15102E 15102X 15104X 15108S 15102P 15116P 15102S 15108P 15108X 15116S 15104E 15116X 15104S 15116E 15104XI 15102XI 15116XI 15108XI 15108E I5102X I5116X 15104SI 15104EI 15104P 15104PI
OCR Text ...his feature allows customers to store phone numbers, system configuration parameters and message address locations for message management ca...rec = 30 mA (typical) ICC Feedthrough = 12 mA (typical) Standby Current: ISB = 1A (typical) Most sta...
Description CAP 6.8UF 35V 20% TANT SMD-7343-30 TR-7
CAP 4.7UF 25V 20% TANT SMD-3528-21 TR-7
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE recORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY 单芯6分钟的语音记播放设备数字存储能力
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE recORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY 单芯16分钟的语音记播放设备数字存储能力

File Size 620.86K  /  88 Page

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    PT100MC0MP PT100MC0MP1

Sharp Electrionic Components
Part No. PT100MC0MP PT100MC0MP1
OCR Text ...mc0mpx storage and handling 1. store these parts between 5c and 30c, at a relative humidity of less than 70 % . 2. after breaking the package seal, maintain the environment within 5c to 25c, at a relative humidity of less than 60 % , and m...
Description Surface Mount Type, Transparent Resin Phototransistor

File Size 766.09K  /  11 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC110D170H Q67050-A4179-A001
OCR Text ...der Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 E...rec 1 Erec2 I F= 2 0 0 A di/dt=960 A/s V R =900V I F= 2 0 0 A di/dt=960 A/s V R =900V I F= 2 0 0 A ...
Description 200 A, 1700 V, SILICON, recTIFIER DIODE
Fast switching diode chip in EMCON 3 -Technology

File Size 62.58K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC78D170H
OCR Text ...der Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 E...rec 1 Erec2 I F= 1 5 0 A di/dt=730 A/s V R =900V I F= 1 5 0 A di/dt=730 A/s V R =900V I F= 1 5 0 A ...
Description Fast switching diode chip in EMCON 3 -Technology

File Size 151.46K  /  4 Page

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    PXD1005 PXD10PB PXD1010 PPXR1005VLQ120R PPXR1005VLU64R PPXR1005VLQ64R PPXR1005VLU120R SPXR1005VLQ120R MPXR1005VLQ120R MP

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. PXD1005 PXD10PB PXD1010 PPXR1005VLQ120R PPXR1005VLU64R PPXR1005VLQ64R PPXR1005VLU120R SPXR1005VLQ120R MPXR1005VLQ120R MPXR1005VLQ64R SPXR1005VLQ64R SPXD1010VLQ120R SPXS1010VLQ120R PPXN1010VLQ120R PPXR1010VLQ120R MPXS1010VLQ120R SPXR1010VLQ120R MPXD1010VLQ64 MPXR1010VLQ120R MPXN1010VLQ120R PPXS1010VLQ120R SPXN1010VLQ120R MPXD1010VLQ120R PPXD1010VLQ120R MPXN1005VLQ120R SPXN1005VLQ120R SPXN1005VLQ64R PPXN1005VLU120R SPXN1005VLU120R PPXN1005VLU64R MPXN1005VLU64R PPXN1005VLQ120R PPXN1005VLQ64R MPXN1005VLQ64R MPXN1005VLU120R SPXN1005VLU64R MPXS1005VLQ120R SPXS1005VLQ64R PPXS1005VLQ120R PPXS1005VLQ64R MPXS1005VLQ64R SPXS1005VLU120R PPXS1005VLU64R PPXS1005VLU120R MPXS1005VLU64R SPXS1005VLQ120R MPXS1005VLU120R
OCR Text ...struction unit vle general load/store unit purpose registers (32 x 32-bit) branch unit intc jtag peripheral i/o bridge (pbridge) oscillators...rec overy low power mode than the lo west standby mode. there is no need to reconfigure the de vice...
Description 32-bit Power Architecture? Microcontrollers for Entry Level Display Solutions
   32-bit Power Architecture? Microcontrollers for Entry Level Display Solutions

File Size 113.05K  /  26 Page

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    SIDC46D170H04

Infineon Technologies AG
Infineon Technologies A...
Part No. SIDC46D170H04
OCR Text ...commended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c ...rec 1 t j = 25 c 10.0 reverse recovery energy e rec2 i f =75a di/dt=920 a/ m s v ...
Description Fast switching diode chip in EMCON 3 -Technology
   Fast switching diode chip in EMCON 3 -Technology

File Size 62.59K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC06D60AC6
OCR Text ...der Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 E...rec di/dt=1800A/ s V R =300V V GE = - 1 5 V mJ 2) values also influenced by parasitic L-...
Description Fast switching diode chip in EMCON 3 -Technology

File Size 56.72K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC05D60C6
OCR Text ...der Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 E...rec di/dt=1600A/ s V R =300V V GE = - 1 5 V mJ 2) values also influenced by parasitic L-...
Description Fast switching diode chip in EMCON 3 -Technology

File Size 58.39K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC03D60C6
OCR Text ...der Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 E...rec di/dt=1500A/ s V R =300V V GE = - 1 5 V 2) values also influenced by parasitic L- and C...
Description Fast switching diode chip in EMCON 3 -Technology

File Size 60.79K  /  4 Page

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