Description |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory<br>FEEDtHRU CAPACItOR, 47PF 3A 100VFEEDtHRU CAPACItOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; tolerance, :50%; tolerance, -:20%; temp, op. max:125(degree C); temp, op.<br>Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes<br>Am29LV400b KGD (Known Good Die Supplement)<br>INNOLINE: High Voltage Input Series - For telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-bit/256亩x 16位).0伏的CMOS只引导扇区闪<br>4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory 4兆位12亩x 8-bit/256亩x 16位).0伏的CMOS只引导扇区闪<br>4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PbGA48<br>4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48<br>4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory 4兆位12x 8-bit/256x 16位).0伏的CMOS只引导扇区闪<br>CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-bit/256亩x 16位).0伏的CMOS只引导扇区闪<br>4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 Volt-only boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48<br>
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