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  ultra-fasttm speed igbt Datasheet PDF File

For ultra-fasttm speed igbt Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
Description High speed PT igbt
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL igbt

File Size 235.94K  /  9 Page

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    APT50GT60BR APT50GT60SRG APT50GT60BRG

Microsemi Corporation
http://
Microsemi, Corp.
Part No. APT50GT60BR APT50GT60SRG APT50GT60BRG
Description Thunderbolt igbt
Insulated Gate Bipolar Transistor - NPT Standard speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL igbt, TO-247AD

File Size 139.24K  /  6 Page

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    CFD444811 CFD4448-15

Central Semiconductor Corp
Central Semiconductor C...
Part No. CFD444811 CFD4448-15
Description SURFACE MOUNT ULTRA HIGH speed
SURFACE MOUNT ULTRA HIGH speed SILICON SWITCHING DIODE

File Size 494.64K  /  2 Page

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    HI20201JCB HI20201

Intersil Corporation
Part No. HI20201JCB HI20201
Description D/A Converter, 10-Bit, 160MSPS, Ultra High speed
10 Bit, 160 Msps, Ultra High speed D/A Converter

File Size 175.50K  /  13 Page

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    APT100GT120JR

Microsemi, Corp.
Microsemi Corporation
Part No. APT100GT120JR
Description Insulated Gate Bipolar Transistor - NPT Standard speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL igbt
Thunderbolt igbt

File Size 187.32K  /  6 Page

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    BUP304 Q67078-A4200-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP304 Q67078-A4200-A2
Description From old datasheet system
igbt (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL igbt, TO-218

File Size 378.68K  /  7 Page

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    APT150GT120JR

Microsemi Corporation
Microsemi, Corp.
Part No. APT150GT120JR
Description Thunderbolt igbt
Insulated Gate Bipolar Transistor - NPT Standard speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL igbt

File Size 669.00K  /  6 Page

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    1SS302TE85LF 1SS302T5LFH

Toshiba Semiconductor
Part No. 1SS302TE85LF 1SS302T5LFH
Description Ultra High speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
   Ultra High speed Switching Applications

File Size 187.39K  /  3 Page

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    LT1028A LT1128A LT1028CSW

Linear Technology
Part No. LT1028A LT1128A LT1028CSW
Description Ultralow Noise Precision High speed Op Amps
Unity Gain Stable Ultra-Low Noise Precision High speed Op Amp
Ultra Low Noise Precision High speed Op Amps

File Size 447.76K  /  20 Page

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    STGW30NC60WD STGW30NC60WD07 GW30NC60WD

STMicroelectronics
Part No. STGW30NC60WD STGW30NC60WD07 GW30NC60WD
Description STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH igbt
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> igbt
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 igbt

File Size 278.36K  /  14 Page

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For ultra-fasttm speed igbt Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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