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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KST06 KST05 KST05MTF KST06MTF
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| OCR Text |
... unless otherwise noted
Symbol VCBO Parameter Collecto-Base Voltage : KST05 : KST06 VCEO Collector-Emitter Voltage : KST05 : KST06 VEBO IC ...60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=... |
| Description |
Driver Transistor
NPN Epitaxial Silicon Transistor
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| File Size |
42.59K /
3 Page |
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Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
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| Part No. |
CMPT2222 CMPT2222A
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| OCR Text |
...ature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA
The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor man...60V VCB=60V, TA=125oC VCE=60V, VEB=3.0V VEB=3.0V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, I... |
| Description |
NPN SILICON TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
79.41K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CMPT2222AE
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| OCR Text |
...re Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA
100 45 6.0 600 350 -65 to +150 357
ELECTRICAL CHARACTERI...60V ICBO VCB=60V, TA=125C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10A 100 145 BVCEO IC=10mA 45... |
| Description |
SMD Small Signal Transistor PNP General Purpose Amplifier/Switch
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
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| File Size |
138.56K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CMLT2222A
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| OCR Text |
... Temperature Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg JA
O O
UNITS 75 40 6.0 600 350 -65 to +150 357 V V V mA mW C C/W
O
O
...60V O VCB=60V, TA=125 C VCE=60V, VEB=3.0V VEB=3.0V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA,... |
| Description |
SMD Small Signal Transistor Dual NPN General Purpose Amplifier/Switc
SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS
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| File Size |
92.41K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CMLT2207
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| OCR Text |
...rmal Resistance (TA=25C) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted...60V VCB=50V VCB=60V, TA=125C VCB=50V, TA=125C VEB=3.0V VCE=60V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500m... |
| Description |
SMD Small Signal Transistor Dual NPN & PNP General Purpose Amplifier
SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS
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| File Size |
94.82K /
2 Page |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
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| Part No. |
BDS12IG BDS10IG BDS11IG
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| OCR Text |
...e=25C unless otherwise stated)
VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0...60V 60V
BDS11 80V 80V 5V 15A 5A 90W
BDS12 100V 100V
-65 TO 200C 200C
Semelab plc.
Tel... |
| Description |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
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| File Size |
14.52K /
2 Page |
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it Online |
Download Datasheet |
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