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  vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 278    Search Time::2.343ms    
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    QM400HA-2HB

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM400HA-2HB
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=400A, IB1=800mA, -IB2=8.0A -- -- Transistor part Diode part Conductive grease applied -- --...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 73.90K  /  5 Page

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    QM400HA-2H

Mitsubishi Electric Semiconductor
Part No. QM400HA-2H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=400A, IB1=-IB2=8A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description 400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 68.64K  /  5 Page

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    QM400HA-H

Mitsubishi Electric Semiconductor
Part No. QM400HA-H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=400A, IB=0.53A -IC=400A (diode forward voltage) IC=400...
Description 400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 64.64K  /  5 Page

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    Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM500HA-H QM500
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=500A, IB=0.67A -IC=500A (diode forward voltage) IC=500...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.35K  /  5 Page

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    STX7905

Solid States Devices, Inc
Part No. STX7905
OCR Text ... 2 - Base 3 - Emmiter SYMBOL VCEO VCER VCBO VEBO IC IB PD TJ, TSTG R1JC VALUE 450 600 600 6 1 0.5 20 133 -65 to +200 7.5 UNITS Volts Volts Volts Amps Amps Watts mW/ oC o C o C/W NOTE: All specifications are subject to ...
Description 1 AMP 600 VOLTS NPN TRANSISTOR

File Size 47.26K  /  2 Page

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    QM30TF-HB

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. QM30TF-HB
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, V...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 86.89K  /  5 Page

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    QM15DX-24

Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
Part No. QM15DX-24
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=15A, IB1=-IB2=0.3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Condu...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 68.87K  /  5 Page

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    2SA1627

Unisonic Technologies
Part No. 2SA1627
OCR Text ...s,Duty Cycle50% SYMBOL VCBO VCEO VEBO PC Ic Icp *1 Tj TSTG VALUE -600 -600 -7.0 1.0 -1.0 -2.0 150 -55 to +150 UNIT V V V W A A C...600V,IE=0 VEB= -7.0V,Ic=0 VCE= -5.0V,Ic= -0.1A VCE= -5.0V,Ic= -0.5A Ic= -0.3A,IB= -0.06A Ic= -0.3A,I...
Description PNP EPITAXIAL SILICON TRANSISTOR

File Size 95.43K  /  3 Page

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    2SC5417

Sanyo Semicon Device
Part No. 2SC5417
OCR Text ...Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25C Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : ...600V, IE=0 VCE=1200V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC...
Description Inverter Lighting Applications

File Size 45.16K  /  4 Page

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    2SC4907

Sanken electric
Part No. 2SC4907
OCR Text ...m ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4907 600 500 10 6(Pulse12) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C ...600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 1...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.01K  /  1 Page

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For vceo-600v Found Datasheets File :: 278    Search Time::2.343ms    
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