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    MLX10407

List of Unclassifed Manufacturers
ETC[ETC]
Part No. MLX10407
OCR Text ...w transmission to the 10407. If ver (pin 17) is connected to VDD then the 10407 does not store values of angles and quadrant in case of an error. It is however possible to make the 10407 store all angles and quadrant values even if there is...
Description 5-Channel Gauge Driver with Serial Link

File Size 91.74K  /  9 Page

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    TIANMA
Part No. TM12864LBCW6
OCR Text ...ma microelectronics co., ltd ver. 1.0 1/21 ver. 1.0 revision record date ref. page revision no. revision items check & approval 2/21 ve...
Description LCD_Module

File Size 271.85K  /  22 Page

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    SamHop Microelectronics
Part No. STT626
OCR Text ... current-continuous -pulsed b a ver 1.0 www.samhop.com.tw jul,22,2013 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c maximum power dissipation operating junction and storage temperature range t j ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.34K  /  8 Page

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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ...ty * Self-refresh capability (L-ver only) * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early Write or output enable controlled write * JEDEC Standard pinout * Available in plastic SOJ 400mil and TSOP(II) packages * Single +5V10% po...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

File Size 550.56K  /  35 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text ...ty * Self-refresh capability (L-ver only) * Fast parallel test mode capability * LVTTL(3.3V) compatible inputs and outputs * Active Power Dissipation Unit : mW Speed -45 -50 -60 * Refresh Cycles Part NO. K4E660412D* K4E640412D Refresh cycle...
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 414.70K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text ...ty * Self-refresh capability (L-ver only) * Fast parallel test mode capability * LVTTL(3.3V) compatible inputs and outputs * Active Power Dissipation Unit : mW Speed -45 -50 -60 * Refresh Cycles Part NO. K4E660812B* K4E640812B Refresh cycle...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text ...ty * Self-refresh capability (L-ver only) * Fast parallel test mode capability * LVTTL(3.3V) compatible inputs and outputs * Active Power Dissipation Unit : mW Speed -45 -50 -60 * Refresh Cycles Part NO. K4E660812C* K4E640812C Refresh cycle...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    K6R4008V1D

SAMSUNG[Samsung semiconductor]
Part No. K6R4008V1D
OCR Text ...lease with Preliminary. Add Low ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1...
Description 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 237.20K  /  10 Page

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    Elpida Memory, Inc.
Part No. EDS2532JEBH-75-E
OCR Text ver. 5.0) date published august 2005 (k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2004-2005 preliminary data sheet 256m bits sdram eds2532jebh-75 (8m words 32 bits) description the eds25...
Description 256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 708.95K  /  50 Page

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    Elpida Memory, Inc.
Part No. EDS2532EEBH-9A EDS2532EEBH-9A-E
OCR Text ver. 4.0) date published august 2005 (k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2004-2005 preliminary data sheet 256m bits sdram eds2532eebh-9a (8m words 32 bits) description the eds25...
Description 256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90

File Size 708.87K  /  50 Page

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