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40PT08A IZ1228M 4N32ST1 1N3088 70030 W2403S R1E10 LTC3410B
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    STF26NM60N-H

意法半导
STMicroelectronics
Part No. STF26NM60N-h
OCR Text ...0 25 20 (1) Unit V V A A A w 12.6 (1) 80 (1) PTOT dv/dt (3) VISO Tstg Tj 30 0.24 Peak diode recovery voltage slope Insulat...h 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(B...
Description Low gate input resistance

File Size 678.92K  /  12 Page

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    TPC8022-H

Toshiba Semiconductor
Part No. TPC8022-h
OCR Text ....08 150 -55 to 150 Unit V V V A w w mJ A mJ C C 1 2 3 4 JEDEC JEITA TOShIBA 2-6J1B weight: 0.085 g (typ.) Drain power dissipa...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) Thermal...
Description high-Efficiency DC/DC Converter Applications

File Size 323.36K  /  7 Page

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    TPC8021-H

Toshiba Semiconductor
Part No. TPC8021-h
OCR Text ...) Drain power dissipation w Circuit Configuration 8 7 6 5 Drain power dissipation 1.0 w Single-pulse avalanche energy ...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2...
Description high-Efficiency DC/DC Converter Applications

File Size 493.25K  /  7 Page

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    TPC8018-H

Toshiba Semiconductor
Part No. TPC8018-h
OCR Text ...) Drain power dissipation w Circuit Configuration 8 7 6 5 Drain power dissipation 1.0 w Single-pulse avalanche energy ...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2...
Description high-Speed and high-Effciency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

File Size 467.41K  /  7 Page

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    AP07N70CI-H AP07N70CI-H14

Advanced Power Electronics Corp.
Part No. AP07N70CI-h AP07N70CI-h14
OCR Text ... c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj ...h 140 rating 700 + 30 rohs-compliant product 7 -55 to 150 parameter 200903183 storage temperature r...
Description N-ChANNEL ENhANCEMENT MODE POwER MOSFET
Simple Drive Requirement

File Size 95.74K  /  4 Page

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    LV8127T-TLM-H LV8127T-MPB-H

ON Semiconductor
Part No. LV8127T-TLM-h LV8127T-MPB-h
OCR Text ...wer dissipation pd max * 1.1 w operation temperature topr ta ?30 to +100 ? c storage temperature tstg ?55 to +150 ? c *when m...h?) f/r=?l? f/r=?h? in1 in2 in3 in1 in2 in3 upper gate lower gate 1 h l h l h l vout ...
Description 3-phase Bipolar PwM Drive Pre-Driver IC

File Size 511.41K  /  23 Page

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    AP03N70F-H

Advanced Power Electronics Corp.
Part No. AP03N70F-h
OCR Text ...8 29 0.23 2 Units V V A A A w w/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Cur...h Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Par...
Description N-ChANNEL ENhANCEMENT MODE POwER MOSFET

File Size 37.86K  /  4 Page

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    AP03N70I-H

Advanced Power Electronics Corp.
Part No. AP03N70I-h
OCR Text ...8 29 0.23 2 Units V V A A A w w/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Cur...h Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Par...
Description N-ChANNEL ENhANCEMENT MODE POwER MOSFET

File Size 40.30K  /  4 Page

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    Murata Manufacturing Co...
Part No. FDA1055-h-5R6M
OCR Text w s i z e 1 0 . 8 0 . 3 m m t s i z e 5 . 5 m m s i z e c o d e i n i n c h ( m m ) 4 2 4 2 ( 1 0 8 1 0 8 ) d i m e n s i o n s a : 1 1 . 3 m m b : 1 . 4 m m c : 6 . 4 m m r a t e d c u r r e n t ( i s a t ) ...
Description    Inductor

File Size 973.20K  /  2 Page

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    AP03N70P-H

Advanced Power Electronics Corp.
Part No. AP03N70P-h
OCR Text ...54.3 0.44 2 Units V V A A A w w/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Cur...h Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Par...
Description N-ChANNEL ENhANCEMENT MODE POwER MOSFET

File Size 39.88K  /  4 Page

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