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Advanced Micro Devices, Inc.
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Part No. |
AM29LV640MU101WHI AM29LV640MU101RWHI AM29LV640MU101RPCI AM29LV640MU120RPCI
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OCR Text |
...640mu 64 megabit (4 m x 16-bit) mirrorbit ? 3.0 volt-only uniform sector flash memory with versatilei/o ? control distinctive characteristics architectural advantages single power supply operation ? 3 v for read, erase, and program ope... |
Description |
64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with 4M X 16 FLASH 3V PROM, 120 ns, PBGA64
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File Size |
709.65K /
58 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI023 S29GL128P12FAI023 S29GL128P11FAI023 S29GL01GP13FAI023 S29GL01GP11TFIV10 S29GL01GP11TFIV13 S29GL01GP11TFIV12 S29GL128P11FFI022 S29GL128P11FFI020 S29GL128P11FAI010 S29GL128P11FAI022 S29GL128P11FAI012 S29GL128P12FAIV10 S29GL01GP12TAI012 S29GL01GP13FAI022 S29GL128P11TFI022 S29GL128P13TFIV10 S29GL128P13TFIV12 S29GL01GP13TFIV13 S29GL01GP12FFIV10 S29GL01GP13FFIV13 S29GL128P11FFIV13
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OCR Text |
mirrorbit tm flash family s29gl-p mirrorbit tm flash family cover sheet s29gl01gp, s29gl512p, s29gl256p, s29gl128p 1 gigabit, 512 megabit , 2 56 megabit an d 128 megabit 3.0 volt-only page mode flash memory featuring 90 nm mirrorbit proc... |
Description |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
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File Size |
992.82K /
71 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAIR82 S29GL064M90FBIR82 S29GL064M90FCIR82 S29GL064M90TAIR82 S29GL064M90TBIR82 S29GL064M90TCIR82 S29GL064M90TCIR00 S29GL064M90TCIR02 S29GL064M90TCIR92 S29GL064M90TCIR10 S29GL064M90TBIR73 S29GL064M90TBIR90 S29GL064M90TBIR92 S29GL032M S29GL064M90BCIR02 S29GL064M90TCIR40 S29GL064M90TCIR43 S29GL064M90TBIR40 S29GL064M90TBIR43 S29GL064M90BCIR70 S29GL064M90TAIR73
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OCR Text |
mirrorbit tm flash family s29gl256m, s29gl128m, s29gl064m, s29gl032m 256 megabit, 128 megabit, 64 megabit, and 32 megabit, 3.0 volt-only page mode flash memory featuring 0.23 m mirrorbit process technology data sheet this product fa... |
Description |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
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File Size |
1,681.87K /
116 Page |
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Micross Components
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Part No. |
MYX29GL01GS11DPIV2
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OCR Text |
mirrorbit ? eclipse ? flash memory myx29gl01gs11dpiv2* 1gbit - 64m x 16 gl-s mirrorbit ? eclipse ? flash memory features ? tin-lead ball metallurgy ? 65 nm mirrorbit eclipse technology ? single supply (v cc ) for read / program ... |
Description |
Tin-lead ball metallurgy
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File Size |
3,194.97K /
68 Page |
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SPANSION LLC
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Part No. |
S29PL129N60GFW000
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OCR Text |
...e date august 8, 2005 s29pl-n mirrorbit? flash family s29pl256n, s29pl127n, s29pl129n, 256/128/128 megabit (16/8/8 m x 16-bit) cmos 3.0 volt-only simultaneous read/write, page-mode flash memory advance information
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Description |
8M X 16 FLASH 3V PROM, 60 ns, PBGA64
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File Size |
966.30K /
82 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
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OCR Text |
mirrorbit tm flash family s29gl256m, s29gl128m, s29gl064m, s29gl032m 256 megabit, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive chara... |
Description |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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File Size |
2,173.74K /
160 Page |
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Price and Availability
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