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    2SC5474 2SC547

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5474 2SC547
OCR Text ...1.60.15 s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. SS-Mini ty...
Description Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

File Size 33.24K  /  2 Page

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    2SC5478 2SC547

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5478 2SC547
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output) 14 A, 600 V, NPN, Si, POWER TRANSISTOR

File Size 33.44K  /  2 Page

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    2SD1267 2SD1267A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1267 2SD1267A
OCR Text ...o 2SB942 and 2SB942A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q 7.50.2 Solder Dip 4.0 14.00.5 s Absolute Maximum Ratings Parameter Collect...
Description Silicon NPN triple diffusion planar type

File Size 45.36K  /  2 Page

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    Matsshita / Panasonic
Part No. 2SD1499
OCR Text 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package wh...
Description Power Transistors

File Size 33.85K  /  2 Page

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    ROHM[Rohm]
Part No. 2SD1757K
OCR Text 0.5A) 2SD1757K !Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. !External dimensions (Units : mm) (1) 0.4 (3) !Absolute maximum ratings (Ta = 25C) 0.15 1.6 2.8 Parameter Collector-base voltage...
Description Power Transistor (15V 0.5A)

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    hitachi
Part No. 2SD2107
OCR Text ...est conditions I C = 10 A, IE = 0 I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 60 V, IE = 0 VCE = 50 V, RBE = VCE = 4 V, IC = 1 A*1 VCE = 4 V, IC = 0.1 A*1 VCE = 4 V, IC = 1 A*1 I C = 2 A, IB = 0.2 A*1 I C = 2 A, IB = 0.2 A*1 Collector ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 29.54K  /  5 Page

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    2SD2115 2SD2115L 2SD2115S

HITACHI[Hitachi Semiconductor]
Part No. 2SD2115 2SD2115L 2SD2115S
OCR Text ... -- -- -- -- Max -- -- -- 10 -- 0.8 1.3 0.6 V V s Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB = 0.05 A*1 I C =...
Description Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)

File Size 30.57K  /  5 Page

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    Sanyo
Part No. 2SK1474
OCR Text ... 2083B [2SK1474] 1.5 6.5 5.0 2.3 0.5 4 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 : Gate 1 2 3 2.3 2.3 2 : Drain 3 : Source SANYO : TP unit:mm 2092B [2SK1474] 6.5 5.0 4 2.3 1.5 0.5 5...
Description N-Channel Silicon MOSFET

File Size 119.85K  /  4 Page

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    2SK2624LS

Sanyo Semicon Device
Part No. 2SK2624LS
OCR Text ... unit:mm 2078B [2SK2624LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage D...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.48K  /  4 Page

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    2SK2640 2SK2640-01MR 2SK2640-01

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2640 2SK2640-01MR 2SK2640-01
OCR Text ...d N-channel MOS-FET 500V 0,9 10A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C=...
Description N-channel MOS-FET

File Size 296.58K  /  2 Page

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