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  0.0085 Datasheet PDF File

For 0.0085 Found Datasheets File :: 2633    Search Time::2.343ms    
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    SANYO
Part No. 2SC4306
OCR Text ... 2045B [2SC4306] 1.5 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit:mm 2044B [2SC4306] 6.5 5.0 4 2.3 ...
Description NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor

File Size 104.94K  /  5 Page

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    Sanken
Part No. 2SC4381
OCR Text ...V VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=-0.2A VCB=10V, f=1MHz 10max 150min 200min 60min 1.0max 15typ 35typ A V V 16.90.3 8.40.2 VCB= 150 200 13.0min MHz pF 1.350.15 1.350.15 0.85 +0....
Description Silicon NPN Triple Diffused Planar Transistor(TV Vertical Output Audio Output Driver and General Purpose)

File Size 27.13K  /  2 Page

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    2SC4499 2SC4499S 2SC4499L

Hitachi Semiconductor
Part No. 2SC4499 2SC4499S 2SC4499L
OCR Text ...j Tstg 1 Ratings 500 400 10 0.5 1.0 0.75 10 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VC...
Description Silicon NPN Triple Diffused

File Size 45.88K  /  9 Page

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    2SC4629

Hitachi Semiconductor
Part No. 2SC4629
OCR Text ...5 -- Typ -- -- -- -- 120 1.15 8.0 11.5 1.2 Max -- 1 1 10 250 1.85 -- -- 25 Unit V A mA A -- pF GHz dB dB Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f ...
Description Silicon NPN Transistor

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    2SC4981

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Shindengen Electric Mfg.Co.Ltd
Part No. 2SC4981
OCR Text ...orque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Conditions Ratings Item Symbol Unit Collector to EmitterV (sus)I = 0.1A Sustaining Voltage Min 80 V CEO C Collector Cutoff Current At rated Voltage I Max...
Description Switching Power Transistor(7A NPN)

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    TOSHIBA
Part No. 2SC5066
OCR Text ... 12 1 1.1 Max 3/4 3/4 3/4 3/4 2.0 Unit GHz dB Noise figure dB Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ...
Description Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

File Size 269.26K  /  8 Page

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    Panasonic
Part No. 2SC5622
OCR Text ...deflection output 15.50.5 (10.0) 3.20.1 5 (4.5) 3.00.3 5 (2.0) * High breakdown voltage: 1 500 V * High-speed switching * Wide area of safe operation (ASO) 26.50.5 (23.4) I Features 5 (4.0) 2.00.2 1.10.1 0.70.1 5...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 51.07K  /  2 Page

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    Panasonic
Part No. 2SD2067
OCR Text ... supply with the radial taping 0.7 6.90.1 4.0 Unit: mm 2.50.1 (0.8) (1.0) (0.2) 4.50.1 0.65 max. (1.0) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

File Size 75.92K  /  4 Page

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    SANYO
Part No. 2SJ655
OCR Text ...ns Ratings --100 20 --12 --48 2.0 25 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Fo...
Description High Output MOSFETs

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    2SK1958-T2 2SK1958-T1

NEC
Part No. 2SK1958-T2 2SK1958-T1
OCR Text ...PACKAGE DIMENSIONS (in mm) 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 FEATURES * Gate can be driven by 1.5 V * Because of its high input impedance, there's no need to consider drive current components required can be reduced * S...
Description N Channel enhancement MOS FET

File Size 64.38K  /  7 Page

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