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  0.0114 Datasheet PDF File

For 0.0114 Found Datasheets File :: 1703    Search Time::1.359ms    
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    HITACHI[Hitachi Semiconductor]
Part No. 2SC4529
OCR Text ...-- -- -- -- 2.2 4.7 Max -- -- 1.0 10 200 1.0 -- -- V GHz pF Unit V V A A Test condition IC = 100 A, IE = 0 IC = 1 mA, RBE = VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA IC = 100 mA, IB = 10 mA VCE = 5 V, IC = 50 mA VCB = 10 V...
Description From old datasheet system
Silicon NPN Epitaxial VHF Wide Brand Amplifier

File Size 280.09K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SC4545
OCR Text ...the radial taping 10.80.2 0.650.1 2.50.1 0.850.1 1.00.1 0.8 C 90 Features 0.8 C Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base vol...
Description For Medium Output Power Amplification

File Size 77.38K  /  4 Page

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    UTC[Unisonic Technologies]
Part No. 2SC4548
OCR Text ... TEST CONDITIONS IC= 10A,IE=0 IC= 1mA,IB=0,RBE= IE= 10A,IC=0 VCB= 300V,IE=0 VEB=4V,IC=0 VCE=10V, Ic=50mA IC=50mA,IB=5mA IC=50mA,IB=5mA VCB=30V, f=1MHz VCB=30V,f=1MHz VCE=30V,IC=10mA See test circuit See test circuit MIN 400 400 5 ...
Description HIGH VOLTAGE DRIVER APPLICATION

File Size 183.83K  /  4 Page

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    NEC[NEC]
Part No. 2SC4550
OCR Text ...CE = 2 V, IC = 1.5 A) VCE(sat) 0.3 V (IC = 4 A, IB = 0.2 A) * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter vo...
Description Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 132.66K  /  6 Page

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    NEC[NEC]
Part No. 2SC4551
OCR Text ...(VCE = 2 V, IC = 2 A) VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A) * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter vo...
Description Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 137.89K  /  6 Page

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    NEC[NEC]
Part No. 2SC4552
OCR Text ...(VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A) * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter vo...
Description NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 158.02K  /  6 Page

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    NEC[NEC]
Part No. 2SC4553
OCR Text ...(VCE = 2 V, IC = 3 A) VCE(sat) 0.12 V (IC = 3 A, IB = 0.03 A) * On-chip C to E damper diode * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base...
Description Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 122.91K  /  6 Page

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    NEC[NEC]
Part No. 2SC4554
OCR Text ...(VCE = 2 V, IC = 5 A) VCE(sat) 0.12 V (IC = 5 A, IB = 0.05 A) * On-chip C to E damper diode * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base...
Description Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING

File Size 109.08K  /  6 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SC4606
OCR Text ...ary to 2SA1762 6.90.1 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q 1.5 0.4 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to...
Description Silicon NPN epitaxial planer type(For low-frequency driver amplification)

File Size 47.41K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SC4626J
OCR Text 0.05 -0.03 1.000.05 0.800.05 For high-frequency amplification Features * Optimum for RF amplification of FM/AM radios * High transition frequency fT * SS-Mini type package, allowing downsizing of the equipment and automatic insertio...
Description For High-Frequency Amplification

File Size 66.51K  /  3 Page

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