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HITACHI[Hitachi Semiconductor]
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Part No. |
2SC4529
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OCR Text |
...-- -- -- -- 2.2 4.7 Max -- -- 1.0 10 200 1.0 -- -- V GHz pF Unit V V A A Test condition IC = 100 A, IE = 0 IC = 1 mA, RBE = VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA IC = 100 mA, IB = 10 mA VCE = 5 V, IC = 50 mA VCB = 10 V... |
Description |
From old datasheet system Silicon NPN Epitaxial VHF Wide Brand Amplifier
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File Size |
280.09K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
2SC4545
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OCR Text |
...the radial taping
10.80.2
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
Features
0.8 C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base vol... |
Description |
For Medium Output Power Amplification
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File Size |
77.38K /
4 Page |
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UTC[Unisonic Technologies]
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Part No. |
2SC4548
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OCR Text |
...
TEST CONDITIONS
IC= 10A,IE=0 IC= 1mA,IB=0,RBE= IE= 10A,IC=0 VCB= 300V,IE=0 VEB=4V,IC=0 VCE=10V, Ic=50mA IC=50mA,IB=5mA IC=50mA,IB=5mA VCB=30V, f=1MHz VCB=30V,f=1MHz VCE=30V,IC=10mA See test circuit See test circuit
MIN
400 400 5
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Description |
HIGH VOLTAGE DRIVER APPLICATION
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File Size |
183.83K /
4 Page |
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NEC[NEC]
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Part No. |
2SC4550
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OCR Text |
...CE = 2 V, IC = 1.5 A) VCE(sat) 0.3 V (IC = 4 A, IB = 0.2 A) * Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base voltage Collector to emitter vo... |
Description |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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File Size |
132.66K /
6 Page |
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NEC[NEC]
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Part No. |
2SC4551
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OCR Text |
...(VCE = 2 V, IC = 2 A) VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A) * Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base voltage Collector to emitter vo... |
Description |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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File Size |
137.89K /
6 Page |
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NEC[NEC]
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Part No. |
2SC4552
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OCR Text |
...(VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A) * Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base voltage Collector to emitter vo... |
Description |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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File Size |
158.02K /
6 Page |
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NEC[NEC]
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Part No. |
2SC4553
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OCR Text |
...(VCE = 2 V, IC = 3 A) VCE(sat) 0.12 V (IC = 3 A, IB = 0.03 A) * On-chip C to E damper diode * Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base... |
Description |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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File Size |
122.91K /
6 Page |
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NEC[NEC]
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Part No. |
2SC4554
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OCR Text |
...(VCE = 2 V, IC = 5 A) VCE(sat) 0.12 V (IC = 5 A, IB = 0.05 A) * On-chip C to E damper diode * Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base... |
Description |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING
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File Size |
109.08K /
6 Page |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
2SC4606
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OCR Text |
...ary to 2SA1762
6.90.1 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to... |
Description |
Silicon NPN epitaxial planer type(For low-frequency driver amplification)
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File Size |
47.41K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
2SC4626J
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OCR Text |
0.05 -0.03 1.000.05
0.800.05
For high-frequency amplification Features
* Optimum for RF amplification of FM/AM radios * High transition frequency fT * SS-Mini type package, allowing downsizing of the equipment and automatic insertio... |
Description |
For High-Frequency Amplification
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File Size |
66.51K /
3 Page |
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