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CEL[California Eastern Labs]
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| Part No. |
UPA808T-T1-A UPA808T
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| OCR Text |
...at 2 GHz LOW CURRENT OPERATION
0.65 2.0 0.2 1.3 2 1
UPA808T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.1 1.25 0.1
DESCRIPTION
NEC's UPA808T is two NPN high frequency silicon epitaxial transistors e... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
139.84K /
10 Page |
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CEL[California Eastern Labs]
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| Part No. |
UPA807T-T1-A UPA807T
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| OCR Text |
...13 GHz LOW CURRENT OPERATION
2.0 0.2 1.3 2 0.65 1
UPA807T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.1 1.25 0.1
6 0.2 (All Leads) 5
3
4
DESCRIPTION
NEC's UPA807T is two NPN high frequency ... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
167.88K /
12 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
UPA806T-T1-A UPA806T
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| OCR Text |
...LTAGE, LOW CURRENT PERFORMANCE
0.65 2.0 0.2 1.3 2 1
UPA806T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.1 1.25 0.1
6 0.2 (All Leads) 5
3
4
DESCRIPTION
NEC's UPA806T is two NPN high freque... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
165.20K /
10 Page |
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it Online |
Download Datasheet |
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NEC[NEC]
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| Part No. |
UPA2790GR
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| OCR Text |
...e 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3
FEATURES
* Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
1.8 Max.
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -... |
| Description |
SWITCHING N- AND P-CHANNEL POWER MOS FET
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| File Size |
194.04K /
11 Page |
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NEC[NEC]
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| Part No. |
UPA2782GR
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| OCR Text |
...) RDS(on)3 = 19 m TYP. (VGS = 4.0 V, ID = 5.5 A) * Low Ciss: Ciss = 660 pF TYP. * Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
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| File Size |
67.74K /
6 Page |
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NEC[NEC]
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| Part No. |
UPA2781GR
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| OCR Text |
...RDS(on)3 = 12.9 m TYP. (VGS = 4.0 V, ID = 7 A) * Low Ciss: Ciss = 900 pF TYP. * Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.7... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
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| File Size |
61.70K /
6 Page |
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NEC[NEC]
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| Part No. |
UPA2780GR
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| OCR Text |
...RDS(on)3 = 10.3 m TYP. (VGS = 4.0 V, ID = 7 A) * Low Ciss: Ciss = 1200 pF TYP. * Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
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| File Size |
62.37K /
6 Page |
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Download Datasheet |
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NEC Corp.
NEC[NEC]
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| Part No. |
UPA2755GR
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| OCR Text |
...ce 2 4 : Gate 2 5, 6: Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 m MAX. (VGS = 4.5 V, ID = 4.0 A) * Low Ciss: Ciss = 650 pF TYP. * Bui... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET
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| File Size |
91.40K /
7 Page |
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NEC[NEC]
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| Part No. |
UPA2754GR UPA2754GR-E2 UPA2754GR-E1
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| OCR Text |
...ce 2 4 : Gate 2 5, 6: Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 14.5 m MAX. (VGS = 4.5 V, ID = 5.5 A) RDS(on)2 = 15.0 m MAX. (VGS = 4.0 V, ID = 5.5 A) RDS(on)4 = 18.6 m MAX. (VGS = 2... |
| Description |
Nch enhancement-type MOSFET (Dual type)
SWITCHING N-CHANNEL POWER MOSFET
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| File Size |
73.10K /
7 Page |
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it Online |
Download Datasheet |
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NEC[NEC]
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| Part No. |
UPA2753GR UPA2753GR-E1 UPA2753GR-E2
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| OCR Text |
... 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 21.4 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 36.4 m MAX. (VGS = 4.0 V, ID = 4.... |
| Description |
Nch enhancement-type MOSFET (Dual type)
SWITCHING N-CHANNEL POWER MOSFET
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| File Size |
67.42K /
8 Page |
View
it Online |
Download Datasheet |
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