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  0.19m Datasheet PDF File

For 0.19m Found Datasheets File :: 213    Search Time::2.187ms    
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    AON2408

Alpha & Omega Semiconductors
Part No. AON2408
OCR Text ... g i d t a =25c rev 0 : dec 2011 www.aosmd.com page 1 of 6 aon2408 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.5 0.83 1.2 v i d(on)...
Description 20V N-Channel MOSFET

File Size 231.39K  /  5 Page

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    MOSFETIRF6602 IRF6602

International Rectifier
Part No. MOSFETIRF6602 IRF6602
OCR Text ...witching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount VDSS 20V RDS(on) max 13m@VGS = 10V 19m@VGS = 4.5V ID 11A 8.8A Techniques DirectFETTM ISOMETRIC Description...
Description DirectFETTM Power MOSFET
DirectFET Power MOSFET(Vdss=20V)

File Size 130.11K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO8802
OCR Text ...j =55c 25 i gss 100 na v gs(th) 0.5 0.75 1 v i d(on) 30 a 10 13 t j =125c 13.3 16 11.5 14 m ? 15.4 19 m ? 22.2 27 m ? g fs 36 s v sd 0.73 1 v i s 2.4 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g 19.8 nc q gs 1.8 nc q gd 5nc t d(o...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 387.63K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO8804
OCR Text ... gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 10 13 t j =125c 13.3 16 11.5 14 m ? 15.4 19 m ? 22.2 27 m ? g fs 36 s v sd 0.73 1 v i s 2.4 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t ...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 339.94K  /  6 Page

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    ELM34413AA-N

ELM Technology Corporation
Part No. ELM34413AA-N
OCR Text ... vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -3.0 v on state drain current id(on) vgs=-10v, vds=-5v -50 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 12a 10 12 m 1 vgs =- 4.5v, id =-9 a 15 19 m forward transconductance gfs vds =-1 ...
Description Single P-channel MOSFET

File Size 545.08K  /  4 Page

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    FDS367212

Fairchild Semiconductor
Part No. FDS367212
OCR Text ...n. 3: r ja is measured with 1.0 in 2 copper on fr-4 board symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v i dss zero gate voltage drain current v ds = 80v ...
Description N-Channel PowerTrench? MOSFET 100V, 7.5A, 22mΩ

File Size 258.43K  /  7 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON4420L
OCR Text ...j =125c 27 21 26 g fs 30 s v sd 0.75 1 v i s 3a c iss 440 550 660 pf c oss 80 110 140 pf c rss 35 55 80 pf r g 246 ? q g (10v) 8 9.8 12 nc q g (4.5v) 4 4.6 5.5 nc q gs 1.5 1.8 2.2 nc q gd 1.3 2.2 3 nc t d(on) 5ns t r 3.2 ns t d(off) 24 ns...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 470.11K  /  5 Page

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For 0.19m Found Datasheets File :: 213    Search Time::2.187ms    
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