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  0.1m Datasheet PDF File

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current ...1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current ...1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...* Low Ciss Ciss = 2360 pF Typ. 0.70.1 2.54 * Built-in Gate Protection Diode 13.5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25...1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...DIMENSIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = ...1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance ...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...nit : mm 2083B [2SJ499] 6.5 5.0 4 1.5 Low ON-state resistance. 4V drive. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 ...1m ID= --10A DC op Drain Current, ID -- A td (off) tr 10 s 100A tf 100 7 5 3...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...sions unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Max...1m s 10 ms Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 -0.1 2 3 5 7 -1.0...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...sions unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Max...1m s 10 ms er tr 10 7 5 3 2 td(on) at io n Operation in this area is limited by ...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ... unit:mm 2083B [2SJ503] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2....1m s Drain Current, ID - A 10 100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5 td(off) tf ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G ...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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For 0.1m Found Datasheets File :: 27948    Search Time::1.813ms    
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