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0.875 Datasheet PDF File

For 0.875 Found Datasheets File :: 10518 Search Time::3.438ms
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				Advanced Analogic Technologies, Inc. ANALOGICTECH[Advanced Analogic Technologies]
Part No.	AAT4610 AAT4610IGV-1-T1 AAT4610IGV-T1 AAT4610IGV
OCR Text	...ON) GND 2 SET RSET 1F 0.47F GND GND 4610.2001.9.0.97 1 AAT4610 Current Limited Load Switch in SOT-23 Package Pin C...875 1000 1125 1250 1375 1500 1625 1750 1 0.88 A Device with high current limit at -40 C ...
Description	Current Limited Load Switch in SOT-23 Package 电流限制负荷开关采用SOT - 23封装
File Size	310.86K / 10 Page	View it Online	Download Datasheet

				Advanced Analogic Technologies, Inc. ANALOGICTECH[Advanced Analogic Technologies]
Part No.	AAT4611 AAT4611IGV-T1 AAT4611IJS-1-T1 AAT4611IJS-T1 AAT4611IGV-1-T1
OCR Text	...ON) GND 2 SET RSET 1F 0.47F GND GND 4611.2001.8.0.9 1 AAT4611 Current Limited Load Switch in SOT-23 Package Pin Co...875 1000 1125 1250 1375 1500 1625 1750 1 0.88 A Device with high current limit at -40 C ...
Description	Current Limited Load Switch in SOT-23 Package 电流限制负荷开关采用SOT - 23封装
File Size	416.02K / 12 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6032AVR
OCR Text	0.320 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...875) Max. 1.47 (.058) 1.60 (.063) (2-Places) Drain (Case) 29.90 (1.177) 30.40 (1.197) 1.52 (...
Description	POWER MOS V 600V 17.5A 0.320 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.36K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6035 APT6035AVR
OCR Text	0.350 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...875) Max. 1.47 (.058) 1.60 (.063) (2-Places) Drain (Case) 29.90 (1.177) 30.40 (1.197) 1.52 (...
Description	POWER MOS V 600V 16A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.28K / 4 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text	...16) Revision History Revision 0.0 (May, 2003) - Target spec release. Revision 0.1 (October, 2003) - Modified tRDL from 1CLK to 2CLK. Revis...875) 0.30 +0.10 -0.05 0.35 +0.10 -0.05 0.80TYP [0.800.08] 0.05MIN 50Pin TSOP(II) Package Di...
Description	16Mb H-die SDRAM Specification
File Size	106.31K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text	...32) Revision History Revision 0.0 (June, 2003) - Target spec First release. Revision 0.1 (July, 2003) - Delete speed 4.5ns. Revision 0.2 (...875 0.10 MAX 0.004 ( 0.61 ) 0.024 0.10 0.004 0.21 0.008 0.05 0.002 1.00 0.039 0.10...
Description	64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
File Size	115.81K / 12 Page	View it Online	Download Datasheet

				CANDD[C&D Technologies]
Part No.	NTA0312M NTA0315M NTA1215M NTA0505M NTA0509M NTA1205M NTA1209M NTA0512M NTA0515M NTA1212M NTA
OCR Text	...print Over Pins 1.64cm2 UL 94V-0 Package Material No Heatsink Required Internal SMD Construction Toroidal Magnetics Plastic Encapsulate...875 MAX SEATING PLANE 6.60 (6.35) (5.95) 5.85 0.25 0.10 0.1 S PIN 1 GND 3 VIN 5 NA 7 0V 9 ...
Description	Isolated 1W Dual Output SM DC-DC Converters Isolated 1W Dual Output SM DC-DC Converters 2-OUTPUT 1 W DC-DC REG PWR SUPPLY MODULE
File Size	142.87K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE104
OCR Text	... fT Test Conditions IC(peak) = -0.6A, RBE = 68 VCB = 30V, IE = 0 VCE = 2V, IC = 20mA VCE = 2V, IC = 1A IC = 4A, IB = 0.4A VCB = 2V, IE = 1A ...875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30....
Description	Germanium PNP Transistor Audio Frequency Power Amplifier
File Size	19.91K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE1911
OCR Text	...50C D Line Regulation Typically 0.01%/V D Load Regulation Typically 0.3% D Excellent Thermal Regulation, 0.002%/W D 77dB Ripple Rejection D ...875 (22.2) Dia Max Seating Plane .312 (7.93) Min VOUT .215 (5.45) .040 (1.02) 1.187 (30.16) .6...
Description	1.2 V-37 V ADJUSTABLE NEGATIVE REGULATOR, MBFM2 3 Terminal Adjustable Negative Voltage Regulator -1.2V to -37V, 1.5A
File Size	26.04K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE1912
OCR Text	...0mA to 3A, Note 2 IO = 3A, TJ = 0 to +125C VIN = 15V to 27V, IO = 2A, Note 2 VIN = 15V, IO = 10mA VIN = 15V to 22V, IO = 10mA VIN = 15V, IO ...875 (22.2) Dia Max Seating Plane .312 (7.93) Min VOUT .215 (5.45) .040 (1.02) 1.187 (30.16) .6...
Description	Integrated Circuit Positive 3 Terminal Voltage Regulator, 12V, 3A
File Size	23.95K / 2 Page	View it Online	Download Datasheet

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