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Amphenol, Corp. SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPP4953S8TG SPP4953 SPP4953S8RG
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OCR Text |
...
V V A A A W /W
-6.2 -4.0 -30 -2.3 2.8 1.8 -55/150 -55/150 70
2006/10/16 Ver.1
Page 2
SPP4953
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)
Parameter Static Drain-Source Br... |
Description |
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
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File Size |
213.45K /
8 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM2832CY TSM2832
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OCR Text |
...
o
Limit
20V 8 3.6 10 1.5 1.0
Unit
V V A A W
PD
Operating Junction Temperature Operating Junction and Storage Temperature Range
TJ TJ, TSTG
+150 - 55 to +150
o o
C C
Thermal Performance
Parameter
Lead Temperat... |
Description |
20V N-Channel Enhancement Mode MOSFET
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File Size |
166.77K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM3442CX6 TSM3442
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OCR Text |
...PD
Limit
20V 8 3.6 10 1.5 1.0
Unit
V V A A W
Operating Junction Temperature Operating Junction and Storage Temperature Range
TJ TJ, TSTG
+150 - 55 to +150
o o
C C
Thermal Performance
Parameter
Lead Temperature (1... |
Description |
20V N-Channel Enhancement Mode MOSFET
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File Size |
164.33K /
3 Page |
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Taiwan Semiconductor Co., Ltd. TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM4405P
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OCR Text |
...
Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.21mm of PCB area
2
Less than 30% of the area of a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available
Block Diagram
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Description |
Single P-Channel 1.8V Specified MicroSURF MOSFET
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File Size |
179.75K /
6 Page |
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it Online |
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UTC[Unisonic Technologies]
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Part No. |
US104S
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OCR Text |
... 600 800 4 2.5 33 30 4.5 50 1.2 0.2 -40 ~ +150 -40 ~ +125
UNIT
V A A A AS A/s A W C C
UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTIC...90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
UTC assumes no responsibil... |
Description |
SCRs
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File Size |
189.70K /
4 Page |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
VNQ690SPTR-E VNQ690SP-E
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OCR Text |
...R=1.5K; C=100pF) - INPUT
41 -0.3 Internally limited -15 +/- 10 +/- 10 -200 4000 4000 5000 5000 78 53 -40 to 150 -65 to 150
V V A A mA mA mA V V V V W mJ C C
-VCC IOUT IR IIN ISTAT IGND
VESD
- STATUS - OUTPUT - VCC
Ptot EMA... |
Description |
QUAD CHANNEL HIGH SIDE DRIVER
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File Size |
185.32K /
20 Page |
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it Online |
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VITESSE[Vitesse Semiconductor Corporation]
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Part No. |
VSC7958X VSC7958 VSC7958CC
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OCR Text |
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-
+
VBF
VBS
G52184-0, Rev 3.0 05/14/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (8...90m x 90m
This device requires external components when used in die form. Please contact your Vit... |
Description |
2.5Gb/s High Speed Limiting Post Amplifier for OC-48/SDH-16 Applications
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File Size |
66.31K /
8 Page |
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it Online |
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WEITRON[Weitron Technology]
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Part No. |
WT2310
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OCR Text |
...
Value
60
Unit
V
20 3.0 2.3 10 1.38 90 -55~+150 W /W A
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WT2310=2310
http:www.weitron.com.tw
WEITRON
1/6
05-May-05
WT2310
Electrical... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
617.40K /
6 Page |
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WEITRON[Weitron Technology]
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Part No. |
WTD9575
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OCR Text |
...in-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage current VGS=25V Drain-SourceLeakage Current(Tj=25C) VDS=-60V,VGS=0 Drain-SourceLeakage Current(Tj=70C) VDS=-48V,VGS=0 Drain-Source... |
Description |
Surface Mount P-Channel Enhancement Mode POWER MOSFET
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File Size |
398.20K /
6 Page |
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it Online |
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WEITRON[Weitron Technology]
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Part No. |
WTK9435
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OCR Text |
...S (th) IGSS IDSS
Min
-30 -1.0 -
Typ
-
Max
-3.0 100 -1 -5
55 90
Unit
V V nA A
Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-... |
Description |
Surface Mount P-Channel Enhancement Mode MOSFET
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File Size |
1,390.83K /
6 Page |
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it Online |
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Price and Availability
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