|
|
 |
RF MICRO DEVICES INC
|
Part No. |
RFDA2015TR7 RFDA2015PCK-410
|
OCR Text |
1 of 10 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan he...8ghz to 2.2ghz application circuit performance -25 -20 -15 -10 -5 0 5 10 15 1.8 1.9 2.0 2.1 2.2 gain... |
Description |
SPECIALTY ANALOG CIRCUIT, QCC32 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER
|
File Size |
1,007.94K /
10 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SIEMENS[Siemens Semiconductor Group] Infineon
|
Part No. |
BFP183R Q62702-F1594
|
OCR Text |
... 2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...8GHz VCE = Parameter
16
dB
10V 5V
dB 10V
G
18
G
12
3V 2V
3V
2V 16
10
... |
Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
|
File Size |
58.40K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SIEMENS[Siemens Semiconductor Group] Infineon
|
Part No. |
BFP183W Q62702-F1503
|
OCR Text |
... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...8GHz VCE = Parameter
18 dB 10V 5V 3V
dB
G
20
G
14 12
10V 3V 2V
18 2V 16 8 14 6 1... |
Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
|
File Size |
59.61K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|