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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM50CY-H
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| OCR Text |
...25 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg...2V VCB=600V, Emitter open VEB=7V IC=50a, IB=0.65A -IC=50a (diode forward voltage) IC=50a, VCE=2V/5V ... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
71.32K /
5 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM50TF-HB
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| OCR Text |
... 800.25 22 11 Tab#110, t=0.5
8.1 30+1.5 -0.5 29.5
LABEL
7
27
N
10
43
U
V
W
N
12
910.5
P
BuN EuN BvN...2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycl... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
85.44K /
5 Page |
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ANALOGIC TECH
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| Part No. |
AAT3153
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| OCR Text |
1.5X/2X Charge Pump For White LED Applications General Description
The AAT3153 is a low noise, constant frequency charge pump DC/DC convert...2V, DX = 20mA
EN (2V/div) CP (2V/div) VSINK (500mV/div) IIN (100mA/div)
4.1mA
90
10.2mA
2... |
| Description |
High Efficiency 1X/1.5X/2X Charge Pump for White LED Applications
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| File Size |
148.77K /
11 Page |
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it Online |
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Infineon Technologies
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| Part No. |
H30T90
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| OCR Text |
1 rev. 2.3 nov 08 low loss duopack : igbt in trenchstop ? and fieldstop technology with anti-parallel diode features: ? ...2v 3v 0a 10a 20a 30a 40a 50a 60a 70a 80a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v... |
| Description |
IGBT
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| File Size |
285.54K /
12 Page |
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it Online |
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Infineon Technologies
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| Part No. |
H30T100
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| OCR Text |
1 rev. 2.7 nov 08 low loss duopack : igbt in trenchstop and fieldstop technology with anti-parallel diode features: ? 1.1v ...2v 3v 0a 20a 40a 60a 80a 100a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v 1v 2v 3v 0a ... |
| Description |
IGBT
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| File Size |
335.78K /
12 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
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| Part No. |
SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
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| OCR Text |
...nction and storage temperature
1)
ICpul s VGE EAS
80 80 20 115 V mJ
tSC Ptot Tj , Tstg
10 179 -55...+150
s W C
VGE = 15V,...2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure... |
| Description |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
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| File Size |
263.73K /
12 Page |
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it Online |
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Infineon
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| Part No. |
50N60T
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| OCR Text |
1 rev. 2.5 12.06.2013 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, fast recovery anti-parallel emitter contro...2v 3v 0a 20a 40a 60a 80a 100a 120a 15v 7v 9v 11v 13v v g e =20v i c , c o l l e c t o r c u r r e ... |
| Description |
IKW50N60T
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| File Size |
594.75K /
13 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW20N60HS
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| OCR Text |
...ee lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://...2V 4V 6V
0A
0V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output ch... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
354.97K /
14 Page |
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Price and Availability
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