| |
|
 |
SIEMENS AG
|
| Part No. |
BFR182W
|
| OCR Text |
1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz c eb - 0.6 - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 90... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
117.00K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Sanyo
|
| Part No. |
2SC4405
|
| OCR Text |
...9B
[2SC4405]
0.425
0.3 3 0~0.1 0.15
Features
* High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405applied sets... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications
|
| File Size |
111.73K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
|
| Part No. |
BFR182T
|
| OCR Text |
1 npn silicon rf transistor preliminary data for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma ...5 pf c cb - 0.18 - c ce collector-emitter capacitance v ce = 10 v, f = 1 mhz - emitter-base cap... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
92.07K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
|
| Part No. |
BFP182
|
| OCR Text |
1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s ... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
116.33K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
|
| Part No. |
BFP182W
|
| OCR Text |
1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s ... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
116.16K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo
|
| Part No. |
2SC3778 0378
|
| OCR Text |
...VCB=10V, f=1MHz 40* 5.0 0.8 0.5 1.1 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A
* : The 2SC3778 is classified by 20mA hFE as follows :
40
C
80
60
D
120
100
E
200
Any and all SANYO products ... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors
|
| File Size |
124.32K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Part No. |
BFP183R Q62702-F1594
|
| OCR Text |
... 2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA ... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
|
| File Size |
58.40K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Part No. |
BFP183W Q62702-F1503
|
| OCR Text |
... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...5 mW 450 150 - 65 ... + 150 - 65 ... + 150 205 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA ... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
| File Size |
59.61K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
