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5507254 COMPO MAX777MJ PL5209M3 ASB0340 MCP73861 2Y4NANV B300003
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  100-175 Datasheet PDF File

For 100-175 Found Datasheets File :: 74773    Search Time::3.031ms    
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    IPB180N06S4-H1

Infineon Technologies AG
Part No. IPB180N06S4-H1
OCR Text ...reen Product (RoHS compliant) * 100% Avalanche tested * Ultra low RDSon * Ultra high ID PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO...175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter ...
Description OptiMOS-T2 Power-Transistor

File Size 173.79K  /  9 Page

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    Alpha & Omega Semiconductor
Part No. AOTF288L
OCR Text ... v gs =6v) <12.5m (< 12.2m *) 100% uis tested 100% r g tested symbol v ds v gs 80v aot288l/aob288l aotf288l drain-source voltage 80 the ...175 junction and storage temperature range c/w c/w maximum junction-to-ambient a d 1.6 60 4.2 w t a...
Description Single MV MOSFETs (40V - 400V)

File Size 376.85K  /  7 Page

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    IPB120N06S4-H1 IPI120N06S4-H1 IPP120N06S4-H1

Infineon Technologies AG
Part No. IPB120N06S4-H1 IPI120N06S4-H1 IPP120N06S4-H1
OCR Text ...reen Product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N06S4-H1 IPI120N06S4-H1 IPP120N06...175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1...
Description 120 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
OptiMOS-T2 Power-Transistor

File Size 168.28K  /  9 Page

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    UD606G-S08-R UD606G-TN5-R UD606-15

Unisonic Technologies
Part No. UD606G-S08-R UD606G-TN5-R UD606-15
OCR Text ...2-5 ja 50 60 c/w sop-8 70 100 c/w p-channel to-252-5 40 50 c/w sop-8 68 100 c/w ud606 ...175 t a =25 200 160 120 80 40 0 0 1 0.1 0.01 0.001 0.0001 pulse width (s) single pulse power ratin...
Description DUAL ENHANCEMENT MODE

File Size 607.23K  /  11 Page

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    IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03

Infineon Technologies AG
Part No. IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03
OCR Text ...reen Product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 Pack...175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-23 IPB120N06S4-03 IPI120N06S4-03...
Description OptiMOS-T2 Power-Transistor

File Size 168.25K  /  9 Page

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    ST Microelectronics
Part No. SMM4F SMM4F10A-TR SMM4F15A-TR SMM4F20A-TR SMM4F18A-TR SMM4F12A-TR SMM4F13A-TR
OCR Text ...25 c x (1 + t x (t j - 25)) 100 50 %i pp t r t p 0 t repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) cha...175 200 p pp [t j initial] / p p p [t j init ial =25 c] t (c) j initial 0.1 1.0 10.0 1.0e-03 1.0e-02...
Description High junction temperature Transil™

File Size 156.96K  /  10 Page

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    ST Microelectronics
Part No. SMM4F12AVCL
OCR Text ...waveform x/y s t p = x s y s %i 100 50 0 t smm4f12avcl characteristics doc id 022220 rev 1 3/7 figure 5. clamping volt...175 200 10/1000 s t (c) j initial p (kw) pp 0.1 1.0 10.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t j init...
Description 400 W low clamping voltage Transil™

File Size 70.16K  /  7 Page

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    PMEG4002ESF

NXP Semiconductors
Part No. PMEG4002ESF
OCR Text ...ma; i r = 500 ma; i r(meas) = 100 ma; t j = 25 c - 1.28 - ns [1] device mounted on a ceramic printed-circuit board (pcb), al 2 o 3 , stan...175 125 7 5 2 5 aaa-012162 0.1 0.2 0.3 i f(a v ) (a) 0 (1) (2) (3) (4) fr4 pcb, standard footprint t...
Description 40 V, 0.2 A low VF MEGA Schottky barrier rectifier

File Size 185.42K  /  14 Page

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    IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02

Infineon Technologies AG
Part No. IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02
OCR Text ...reen Product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02 Pack...175 55/175/56 mJ A V W C Unit A Rev. 1.2 page 1 2009-07-01 IPB120N06S4-02 IPI120N06S4-02...
Description OptiMOS-T2 Power-Transistor

File Size 168.86K  /  9 Page

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    BUK7Y08-40B BUK7Y08-40B-15

NXP Semiconductors
Part No. BUK7Y08-40B BUK7Y08-40B-15
OCR Text ...ee Figure 4; see Figure 1 Tmb = 100 C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation ...175 C RGS = 20 k Min -20 -55 -55 Typ Max 40 40 20 75 58.85 332 105 175 175 75 332 146 Unit V V V A A...
Description N-channel TrenchMOS standard level FET

File Size 191.40K  /  14 Page

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