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  12.000001 Datasheet PDF File

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT20S60
OCR Text ...thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =10a 1...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient th...
Description 600V 20A a MOS TM Power Transistor

File Size 746.21K  /  7 Page

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    AOB20S60 AOT20S60 AOTF20S60 AOB20S60L

Alpha & Omega Semiconductors
Part No. AOB20S60 AOT20S60 AOTF20S60 AOB20S60L
OCR Text ...thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =10a 1...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient th...
Description 600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor

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    NUU205E

NICHIA CORPORATION
Part No. NUU205E
OCR Text ... 4. pd anode pin connection 12 ld 4 pd 3 (flange) protection device this model has a protection device built in as a protection circuit against static electricity. 1. ld anode 2. ld cathode 3. pd cathode 4. pd anode pin c...
Description LD Receptacle Module (Ultra Violet Type)

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    NGTB30N60IHLWG

ON Semiconductor
Part No. NGTB30N60IHLWG
OCR Text ...40 120 100 80 60 40 20 0 048 16 12 ? 75 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0 ? 25 25 75 125 175 t j , junction temperature ( c) v...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001...
Description Insulated Gate Bipolar Transistor (IGBT)

File Size 174.69K  /  10 Page

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    NGTB30N120IHSWG

ON Semiconductor
Part No. NGTB30N120IHSWG
OCR Text ...ge , gate ? emitter voltage (v) 12 4 0 250 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature v ce , coll...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse...
Description IGBT

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    NGTB15N60EG

ON Semiconductor
Part No. NGTB15N60EG
OCR Text ... = 20 v 60 50 40 30 20 10 0 04 12 816 3.5 3 2.5 2 1.5 1 0.5 0 ? 60 ? 40 ? 20 0 20 40 60 80 100 120 140 160 10000 1000 100 10 0 10 20 30 100...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse...
Description IGBT - Short-Circuit Rated

File Size 171.67K  /  10 Page

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    NGTB30N60FWG

ON Semiconductor
Part No. NGTB30N60FWG
OCR Text ...ge , gate ? emitter voltage (v) 12 8 4 0 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r ...
Description Insulated Gate Bipolar Transistor (IGBT)

File Size 176.96K  /  10 Page

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    NGTB30N60FLWG

ON Semiconductor
Part No. NGTB30N60FLWG
OCR Text ...ge , gate ? emitter voltage (v) 12 8 4 0 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r ...
Description Insulated Gate Bipolar Transistor (IGBT)

File Size 176.44K  /  10 Page

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    NGTB40N60IHLWG

ON Semiconductor
Part No. NGTB40N60IHLWG
OCR Text ...40 120 100 80 60 40 20 0 048 16 12 ? 75 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0 ? 25 25 75 125 175 t j , junction temperature ( c) v...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001...
Description Insulated Gate Bipolar Transistor (IGBT)

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    MBR30H100CT

ON Semiconductor
Part No. MBR30H100CT
OCR Text ... 0.6 1.2 10 t j = 125 c 4 6 8 12 14 dc 25 15 25 20 20 mbr30h100ct http://onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (volts...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A(100V,30A开关模式功率整流器) 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 65.36K  /  6 Page

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