|
|
 |
Microsemi, Corp.
|
Part No. |
APT50GT120B2RDQ2G
|
Description |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; Bv(CES) (v): 1200; vCE(sat) (v): 3.2; IC (A): 50; 94 A, 1200 v, N-CHANNEL IGBT, TO-247
|
File Size |
224.58K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Microsemi, Corp.
|
Part No. |
APT75GN120J
|
Description |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; Bv(CES) (v): 1200; vCE(sat) (v): 1.7; IC (A): 68; 124 A, 1200 v, N-CHANNEL IGBT
|
File Size |
286.25K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Mitsubishi Electric Corporation
|
Part No. |
RM200DA-24F
|
Description |
200 A, 1200 v, SILICON, RECTIFIER DIODE Fast Recovery Diode Modules, F series (for Bipolar speed switching)
|
File Size |
56.79K /
3 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|