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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506
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| OCR Text |
... 5.1
Ictotal (mA)
195 190 185 180 175 170 5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Frequency (GHz)
Typical EVM vs. Frequency (Vc =3.3V... |
| Description |
InGaP HBT 4.5 - 6GHz Power Amplifier
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| File Size |
496.83K /
10 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
M470L3224BT0 M470L3224BTO
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| OCR Text |
...VDD 113 DQS7 115 A10/AP 183 VSS 185 BA0 117 DQ58 187 /WE 119 DQ59 189 /S0 121 VDD 191 DU 123 SDA 193 VSS 125 SCL 127 DQ32 195 129 DQ33 197 V...200MHZ. 5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track ... |
| Description |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet 256MB DDR SDRAM MODULE
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| File Size |
125.20K /
14 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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| Part No. |
M470L6423CK0
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| OCR Text |
...VDD 113 DQS7 115 A10/AP 183 VSS 185 BA0 117 DQ58 187 /WE 119 DQ59 189 /S0 121 VDD 191 DU 123 SDA 193 VSS 125 SCL 127 DQ32 195 129 DQ33 197 V...200MHZ. 5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track ... |
| Description |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
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| File Size |
107.08K /
14 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE161
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| OCR Text |
...tes to unity.
.220 (5.58) Dia .185 (4.7) Dia
.190 (4.82)
.030 (.762)
.500 (12.7) Min
.018 (0.45) Dia Base Emitter Collector
45 Case .040 (1.02)
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| Description |
Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc
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| File Size |
23.39K /
2 Page |
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panasonic
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| Part No. |
2SC2631
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| OCR Text |
...k classification
R 130 ~ 220 S 185 ~ 330 hFE
Rank
0.70.2
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
5.10.2
s Features
359
... |
| Description |
TO-92-A1
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| File Size |
51.26K /
3 Page |
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it Online |
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Price and Availability
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