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  2.20-2.45mm Datasheet PDF File

For 2.20-2.45mm Found Datasheets File :: 604    Search Time::3.484ms    
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    DF3A8.2FV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2FV
OCR Text ... lowers the mounting cost. 1 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Power dissipation Junction temperature Storage tem...20 0.5 Unit V A pF 38 1 2007-11-01 DF3A8.2FV Guaranteed Level of ESD Immunit...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
OCR Text ...itance: CT = 5.0 pF (typ.) 1 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150 * 150 -55~150 Unit mW C C 0.50.05 VESM 1. CATHO...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

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    HV600807

Supertex, Inc
Part No. HV600807
OCR Text ...D21 Supply voltage, bs VPP1,2 VNN1,2 dissipation3 O age, Supply voltage, Logic input Ground levels1 els currrent2 Continuous total p...20 +20 -39 VDD1 VDD2 +2 VDD1 +2 -2 +3 -50 +1 -1 Min Typ Max 500 VDD2 -2 Units A V V V V A A mA mA V ...
Description 32-Channel ±40V Liquid Crystal Display Row Driver
32-Channel 【40V Liquid Crystal Display Row Driver

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    SSM3J16FV

Toshiba, Corp.
Toshiba Semiconductor
Part No. SSM3J16FV
OCR Text ...4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) 1.20.05 0.80.05 0.320.05 3 0.130.05 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta = 25C) 1.20.05 0.80.05 Gate-Source voltage Drain current DC Pulse...
Description Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications 场效应晶体管硅P通道马鞍山型高速开关应用模拟开关应

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    SSM3K03FV

Toshiba, Corp.
Toshiba Semiconductor
Part No. SSM3K03FV
OCR Text ...0.05 1.20.05 0.80.05 0.320.05 3 2 0.130.05 Unit: mm * * * * 2.5 V gate drive 1.20.05 0.80.05 High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Optimum for high-density mounting in small packages 0.4 1 Ab...
Description High Speed Switching Applications 高速开关应

File Size 520.44K  /  5 Page

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    SSM3K04FV

Toshiba Semiconductor
Part No. SSM3K04FV
OCR Text ... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 * * * * * With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive High input impedance 1.20.05 0.80.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Optimum for high-de...
Description High Speed Switching Applications

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    SSM3K15FV07 SSM3K15FV

http://
Toshiba Semiconductor
Part No. SSM3K15FV07 SSM3K15FV
OCR Text ... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 Optimum for high-density mounting in small packages * Low on-resistance : Ron = 4.0 (max) (@VGS = 4 V) 1.20.05 0.80.05 0.4 : Ron = 7.0 (max) (@VGS = 2.5 V) 1 Absolute Maximum Rati...
Description High Speed Switching Applications

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    SSM3K16FV

Toshiba Semiconductor
Part No. SSM3K16FV
OCR Text ... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 : Ron = 4.0 (max) (@VGS = 2.5 V) 0.4 1 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (N...
Description Silicon N Channel MOS Type High Speed Switching Applications

File Size 124.16K  /  5 Page

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    FXLH1T45L6X FXLH1T45

Fairchild Semiconductor
Part No. FXLH1T45L6X FXLH1T45
OCR Text ...rectional interface between any 2 levels from 1.1V tm General Description The FXLH1T45 is a single bit configurable dual-voltage supp...20.0 -10.0 10.0 -10.0 10.0 500 Units A II(OD) Bushold Input Over-Drive Current-to-Change S...
Description Low Voltage 1-Bit Bi-directional Level Translator with Configurable Voltage Supplies and Bushold Data Inputs (Advance Information)

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    CDH3D13DSHPNP-220M CDH3D13DSHPNP-2R2M CDH3D13DSHPNP-100M CDH3D13DSHPNP-120M CDH3D13DSHPNP-150M CDH3D13DSHPNP-1R2M CDH3D1

Sumida Corporation
Part No. CDH3D13DSHPNP-220M CDH3D13DSHPNP-2R2M CDH3D13DSHPNP-100M CDH3D13DSHPNP-120M CDH3D13DSHPNP-150M CDH3D13DSHPNP-1R2M CDH3D13DSHPNP-1R5M CDH3D13DSHPNP-3R3M CDH3D13DSHPNP-4R7M CDH3D13DSHPNP-5R6M CDH3D13DSHPNP-6R8M CDH3D13D
OCR Text ... you www.sumida.com 3.0 1/2 Power Inductors <SMD Type: CDH Series> Type: CDH3D13D/SHP Specification(CDH3D13D/SHP) Part Name ...20) 90.4(72.3) 102.5(82.0) 128.3(102.6) 156.6(125.3) 201.8(161.4) 259.5(207.6) 323.8(259.0) 415.0(33...
Description Power Inductors

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For 2.20-2.45mm Found Datasheets File :: 604    Search Time::3.484ms    
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