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  200mw 85volt plastic-encapsula Datasheet PDF File

For 200mw 85volt plastic-encapsula Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    BAT46W-TP

Micro Commercial Components
Part No. BAT46W-TP
Description 200mw Schottky Diode 100 Volts

File Size 218.00K  /  3 Page

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    BC817-16WRFG BC817-25WRFG BC817-40WRFG

Taiwan Semiconductor Company, Ltd
Part No. BC817-16WRFG BC817-25WRFG BC817-40WRFG
Description 200mw, NPN Small Signal Transistor

File Size 543.18K  /  4 Page

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    Yea Shin Technology Co....
Part No. MM3ZXXVC
Description 200mw SOD-323 SURFACE MOUNT

File Size 1,612.89K  /  4 Page

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    Taiwan Semiconductor Co...
Part No. BZT52B75S
Description 200mw, 2% Tolerance SMD Zener Diode

File Size 229.67K  /  6 Page

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    Shenzhen Luguang Electronic Technology Co., Ltd
Part No. MMSZ5233BS MMSZ5235BS
Description 200mw Surface Mount Zener Diode

File Size 182.86K  /  3 Page

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    SLD302V-25 SLD302V-3 SLD302V SLD302V-2 SLD302V-1 SLD302V-21 SLD302V-24

Sony Corporation
Part No. SLD302V-25 SLD302V-3 SLD302V SLD302V-2 SLD302V-1 SLD302V-21 SLD302V-24
Description 200mw HIGH POWER LASER DIODE

File Size 64.54K  /  7 Page

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    Yea Shin Technology Co....
Part No. MM3ZXXVB
Description 200mw SOD-323 SURFACE MOUNT

File Size 1,402.26K  /  4 Page

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    Brady, Corp.
Part No. G6Z-K-1PER-DC12 G6Z-1PER-DC3 G6Z-K-1PER-DC3 G6Z-1PER-DC5 G6Z-U-1PER-DC12 G6Z-U-1PER-DC3 G6Z-K-1PER-DC5 G6Z-U-1PER-DC4.5 G6Z-1PR-DC24 G6Z-U-1PR-DC24 G6Z-1FE-DC9 G6Z-K-1FE-DC9
Description RF RELAY, SPDT, LATCHED, 0.03A (COIL), 12VDC (COIL), 360mW (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, MOMENTARY, 0.067A (COIL), 3VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.12A (COIL), 3VDC (COIL), 360mW (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, MOMENTARY, 0.04A (COIL), 5VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.017A (COIL), 12VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.067A (COIL), 3VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.072A (COIL), 5VDC (COIL), 360mW (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.044A (COIL), 4.5VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, MOMENTARY, 0.008A (COIL), 24VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, LATCHED, 0.008A (COIL), 24VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, SPDT, MOMENTARY, 0.022A (COIL), 9VDC (COIL), 200mw (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), SURFACE MOUNT-STRAIGHT
RF RELAY, SPDT, LATCHED, 0.04A (COIL), 9VDC (COIL), 360mW (COIL), 0.5A (CONTACT), 30VDC (CONTACT), 2600MHz, 10W (RF INPUT), SURFACE MOUNT-STRAIGHT

File Size 905.03K  /  19 Page

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    K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-G

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
Description DIODE ZENER TRIPLE ISOLATED 200mw 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mw 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mw 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
   256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

File Size 245.98K  /  24 Page

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    PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F636E/PQTP PIC16F636E/SL PIC16F636E/SLQTP PIC16F636E/SN PIC16F636E/SNQT

Microchip Technology Inc.
Microchip Technology, Inc.
Part No. PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F636E/PQTP PIC16F636E/SL PIC16F636E/SLQTP PIC16F636E/SN PIC16F636E/SNQTP PIC16F636E/SS PIC16F636E/SSQTP PIC16F636E/ST PIC16F636E/STQTP PIC16F636TE/MFQTP PIC16F636TE/ST PIC16F636TE/STQTP PIC16F636TE/P PIC16F636TE/PQTP PIC16F636TE/SLQTP PIC16F636TE/SN PIC16F636TE/SNQTP PIC16F636TE/SS PIC16F636TE/SSQTP PIC16F639TI/MF PIC16F639TI/ST PIC16F639TI/P PIC16F639TI/PQTP PIC16F639TI/SNQTP PIC16F639TI/SSQTP PIC16F639TI/MFQTP PIC16F639TI/SL PIC16F639TI/SLQTP PIC12F635E/SSQTP PIC12F635E/MF PIC12F635E/MFQTP PIC12F635E/P PIC12F635E/PQTP PIC12F635E/SL PIC12F635E/ST PIC12F635E/SLQTP PIC12F635E/SN PIC12F635E/SNQTP PIC16F636TI/SSQTP PIC16F636TI/ST PIC16F636TI/SNQTP PIC16F636TI/SLQTP PIC16F636TI/PQTP PIC16F636TI/MFQTP PIC12F635TE/MF PIC12F635TE/MFQTP PIC12F635TE/SNQTP PIC12F635TE/ST PIC12F635TE/P PIC12F635TE/PQTP PIC12F635TE/SL PIC12F635TE/SLQTP PIC12F635TE/SS PIC12F635TE/SSQTP PIC16F636I/SLQTP PIC16F636I/SN PIC16F639E/SLQTP PIC16F636I/SS PIC16F639E/SSQTP PIC16F636I/MF PIC16F636I/PQTP PIC16F636I/SSQTP PIC16F636I/ST PIC16F639E/ST PIC16F639E/SN PIC16F639E/SNQTP PIC16F636I/MFQTP PIC16F636I/SNQTP PIC16F639E/MF PIC16F639E/MFQTP PIC16F639E/P PIC16F639E/PQTP PIC
Description Triple 4-3-3-Input NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50
DIODE ZENER SINGLE 200mw 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-323 3K/REEL
DIODE ZENER SINGLE 150mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mw 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-363 3K/REEL
DIODE ZENER SINGLE 350mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-23 3K/REEL
DIODE ZENER SINGLE 150mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER SINGLE 350mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-23 3K/REEL
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-SOIC 0 to 70
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
DIODE ZENER DUAL ISOLATED 200mw 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mw 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-323 3K/REEL
DIODE ZENER SINGLE 350mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-23 3K/REEL
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER TRIPLE ISOLATED 200mw 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER DUAL ISOLATED 200mw 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER SINGLE 200mw 6.2Vz 20mA-Izt 0.05 5uA-Ir 4 SOT-323 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存8位CMOS微控制器采用纳瓦技
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-PDIP 0 to 70 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技

File Size 1,938.38K  /  196 Page

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