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For 20s Found Datasheets File :: 6841    Search Time::1ms    
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    PUSB6B

Protek Devices
Part No. PUSB6B
OCR Text ...ower ratng of 500 wats for an 8/20s waveshape. the low capacitance of the steering diode allows the designer to protect high speed data applicatons. the pusb6b meets the iec 61000-4-2, iec 61000-4-4 and iec 61000-4-5 requirements. fe atu...
Description 500 WATT low capacitance steering diode/TVS ARRAY

File Size 432.04K  /  6 Page

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    IRFZ44ESPBF

International Rectifier
Part No. IRFZ44ESPBF
OCR Text ... 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse w...
Description Advanced Process Technology

File Size 234.15K  /  11 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ...4.5V 1 0.1 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 175C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig ...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRFBA90N20 IRFBA90N20D

IRF[International Rectifier]
Part No. IRFBA90N20 IRFBA90N20D
OCR Text ... 1 5.0V 10 5.0V 0.1 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 1 0.1 1 20s PULSE WIDTH Tj = 175C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics F...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?

File Size 97.19K  /  8 Page

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    IRFR15N20D IRFU15N20D

IRF[International Rectifier]
Part No. IRFR15N20D IRFU15N20D
OCR Text ... 1 5.0V 1 0.1 5.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 0.1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteri...
Description SMPS MOSFET

File Size 180.49K  /  10 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ... 5.0V 1 1 0.1 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 0.1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ...0 -2.0V -2.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig...
Description -20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 169.26K  /  8 Page

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    IRLBA1304 IRLBA1304P

IRF[International Rectifier]
Part No. IRLBA1304 IRLBA1304P
OCR Text ...BOTTOM 2.5V TOP 100 2.5V 20s PULSE WIDTH TJ = 175 C 1 10 100 2.5V 0.1 0.1 1 20s PULSE WIDTH TJ = 25 C 10 100 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Charac...
Description HEXFET? Power MOSFET

File Size 103.65K  /  8 Page

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    BY203 BY203-12S BY203-16S BY203-20S BY203/12S BY203/16S

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
Part No. BY203 BY203-12S BY203-16S BY203-20s BY203/12S BY203/16S
OCR Text ... Type BY203/12S BY203/16S BY203/20s Symbol VRWM VRWM VRWM IFAV IFSM Tj=Tstg Value 1200 1600 2000 250 20 -55...+150 Unit V V V mA A C tp=0.1ms Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=5mm, TL=c...
Description Silicon Mesa Rectifiers 硅梅萨整流器

File Size 33.30K  /  3 Page

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