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AMD[Advanced Micro Devices]
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Part No. |
ATHLON64 SDA3100AIP3AX ADA3200AEP5AP ADAFX51CEP5AK
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OCR Text |
...48h 00h 0Eh 02h 0Eh 1MB 70C 70C 2200MHz 1.50 V 57.8 A 89 W 0.31C/W 2000 MHz 1.40 V 48.4 A 70W 800 MHz 1.30 V 25.2 A 35 W 32.5 A 2.2 W 10.5 A 2.2 W 600mW
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AMD AthlonTM 64 Desktop Processor
Chapter 1
30430 Rev. 3.43
October 20... |
Description |
AMD Athlon 64 Processor Power and Thermal Data Sheet
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File Size |
150.64K /
24 Page |
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it Online |
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Sumitomo Electric Industries, Ltd.
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Part No. |
FLL21E040IK
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OCR Text |
2200mhz ? proven reliability description the fll21e040ik is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is target for high vol... |
Description |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
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File Size |
360.08K /
6 Page |
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it Online |
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Maxim Integrated Products, Inc.
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Part No. |
MAX19995ETXT
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OCR Text |
...re as low as 9db for 1700mhz to 2200mhz diversity receiver applications. with an optimized lo frequency range of 1400mhz to 2000mhz, this mixer is ideal for low-side lo injection architectures. high-side lo injec- tion is supported by the m... |
Description |
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch; Package: THIN QFN, 36 pin ; Temperature Range: -40°C to 85°C TELECOM, CELLULAR, RF FRONT END CIRCUIT, QCC36
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File Size |
508.80K /
29 Page |
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it Online |
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Sumitomo Electric Industries, Ltd.
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Part No. |
FLL21E010MK
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OCR Text |
...broad frequency range : 2100 to 2200mhz ? proven reliability description the fll21e010mk is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. th... |
Description |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
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File Size |
297.20K /
6 Page |
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it Online |
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Sumitomo Electric Industries, Ltd.
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Part No. |
FLL21E090IK
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OCR Text |
2200mhz ? proven reliability description the fll21e090ik is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is targeted for high v... |
Description |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
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File Size |
326.48K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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