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  2mj Datasheet PDF File

For 2mj Found Datasheets File :: 204    Search Time::1.703ms    
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    IHW30N90T

Infineon Technologies AG
Part No. IHW30N90T
OCR Text ...J 0 mJ 4mJ 3mJ Eoff 2mj 1mJ 0mJ 10A 20A 30A 40A 50A 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C,...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode

File Size 325.94K  /  12 Page

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    IHW30N120R2

Infineon Technologies AG
Part No. IHW30N120R2
OCR Text ...LOSSES 4mJ Eoff 3mJ 2mj mJ 50C 75C 100C 125C 150C 0mJ 400V 500V 600V 700V 800V 900V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive lo...
Description Reverse Conducting IGBT with monolithic body diode

File Size 383.17K  /  12 Page

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    Infineon Technologies
Part No. 08N80C3
OCR Text ... PAR = f (f ) parameter: EAR =0.2mj 200 SPP08N80C3 SPA08N80C3 18 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 W www.DataSheet4U.com 160 140 120 100 80 60 40 20 04 10 5 6 pF Ciss 10 3 PAR 10 2 ...
Description Search --To SPP08N80C3

File Size 290.80K  /  12 Page

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    IHW15N120R

Infineon Technologies AG
Part No. IHW15N120R
OCR Text ...RGY LOSSES 2.0 mJ Eoff 2mj Eoff 1.5 mJ 1.0 mJ 1mJ 0.5 mJ 0mJ 0A 5A 10A 15A 20A 25A 0.0 mJ 30 60 90 IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (induct...
Description Reverse Conducting IGBT with monolithic body diode

File Size 367.22K  /  12 Page

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    IGP10N60T

Infineon Technologies A...
Infineon Technologies AG
Part No. IGP10N60T
OCR Text ... 0,2m J E on * 0,3mJ E off 0,2mj 0,1mJ 0,0mJ E on * 50C 100C 150C 0,0m J 300V 350V 400V 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperatur...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 312.57K  /  12 Page

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    IGP10N60T IGP15N60T

Infineon Technologies AG
Part No. IGP10N60T IGP15N60T
OCR Text ...0.5mJ 0.4mJ E off 0.3mJ E on* 0.2mj 25C 50C 75C 100C 125C 150C E ts* E, SWITCHING ENERGY LOSSES 1.0m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * 0.0m J 300V 350V 400V 450V TJ, JUNCTION TEMPERATURE Figure 15. Typical swi...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 358.69K  /  12 Page

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    L9904 9019

STMICROELECTRONICS[STMicroelectronics]
Part No. L9904 9019
OCR Text ...a maximum discharge energy of 0.2mj. 3/17 L9904 THERMAL DATA Symbol TJ TJSD TJSDH Rth j-amb Parameter Operating junction temperature Junction temperature thermal shutdown threshold Junction thermal shutdown hysteresis Thermal resist...
Description From old datasheet system
MOTOR BRIDGE CONTROLLER

File Size 267.19K  /  17 Page

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    Infineon
Part No. SPI08N80C3
OCR Text ... PAR = f (f ) parameter: E AR=0.2mj 200 SPP08N80C3, SPI08N80C3 SPA08N80C3 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 W 160 140 120 100 80 60 40 20 04 10 5 6 pF Ciss 10 3 PAR 10 2 C Coss...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...

File Size 267.87K  /  13 Page

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    ST Microelectronics
Part No. L9823
OCR Text ...s to a dissipated energy e 0.2mj (data available upon request). 2) transient pulses in accordance to din40839 part 1, 3 and iso 7637 part 1, 3. 3) max. output clamp energy at t j = 150c, using single non-repetitive pulse of 500ma therma...
Description OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTIC

File Size 158.96K  /  12 Page

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For 2mj Found Datasheets File :: 204    Search Time::1.703ms    
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