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  3.541 Datasheet PDF File

For 3.541 Found Datasheets File :: 2821    Search Time::1.187ms    
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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ...lts Amps 800 15 0.52 100 500 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0...541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CH...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.71K  /  2 Page

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    APT8056BVFR

ADPOW[Advanced Power Technology]
Part No. APT8056BVFR
OCR Text ... Capacitance Total Gate Charge 3 APT8056BVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF 3700 370 180 185 16...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.50K  /  4 Page

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    APT8056BVR

ADPOW[Advanced Power Technology]
Part No. APT8056BVR
OCR Text ... Capacitance Total Gate Charge 3 APT8056BVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3700 370 180 185 16 90 12...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.19K  /  4 Page

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    APT8058HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8058HVR
OCR Text ... Capacitance Total Gate Charge 3 APT8058HVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3700 370 180 185 16 90 12...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 13.5A 0.580 Ohm

File Size 60.35K  /  4 Page

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    APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065

ADPOW[Advanced Power Technology]
Part No. APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text ... Capacitance Total Gate Charge 3 APT8065BVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF 3050 300 150 150 17...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.14K  /  4 Page

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    APT8065BVR APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065BVR APT8065 APT8065AVR
OCR Text ... Capacitance Total Gate Charge 3 APT8065BVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3050 300 150 150 17 70 12...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.69K  /  4 Page

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    APT8065SVR

ADPOW[Advanced Power Technology]
Part No. APT8065SVR
OCR Text ... Capacitance Total Gate Charge 3 APT8065SVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3050 300 150 150 17 70 12...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 800V 13A 0.650 Ohm

File Size 63.31K  /  4 Page

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...ough optimized gate layout. TO-3 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MA...541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Dis...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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    APT8067HVR

ADPOW[Advanced Power Technology]
Part No. APT8067HVR
OCR Text ... Capacitance Total Gate Charge 3 APT8067HVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3050 300 150 150 17 70 12...
Description POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.92K  /  4 Page

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text ... Capacitance Total Gate Charge 3 APT8075BVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF 2600 270 135 130 13...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.90K  /  4 Page

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