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  36.0v Datasheet PDF File

For 36.0v Found Datasheets File :: 679    Search Time::2.578ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG12N60C3D
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES...
Description From old datasheet system
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

File Size 123.26K  /  8 Page

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    AP25G45GEM

Advanced Power Electronics Corp.
Part No. AP25G45GEM
OCR Text ... VCE=VGE, IC=250uA IC=50A VCE=360V VGE=4.5V VCC=225V IC=50A RG=25 VGE=10V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on Min. copper pad...
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

File Size 68.46K  /  3 Page

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    HARRIS[Harris Corporation]
Part No. HGTD3N60C3S HGTD3N60C3
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 82. 6 3 24 20 30 18A at 480V 33 0.27 100 -40 to 150 260 8 W W/oC mJ oC oC UNITS V A A A V V 600 s Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Speci...
Description 6A, 600V, UFS Series N-Channel IGBTs

File Size 227.56K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1Y40N60B3D
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3. S Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150o...
Description TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 122.85K  /  9 Page

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    Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. H01N45A
OCR Text ...e Charge Gate-Drain Charge (VDS=360V, ID=0.5A, VGS=10V, RG=4.7) (VDD=225V, ID=0.5A, RG=4.7, VGS=10V) 6.7 4 14 2 3.2 20 nC ns Switching Off tr(Voff) tf tC Off-Voltage Rise Time Fall Time Cross-Over Time (VDD=360V, ID=1.5A, RG=4.7, VGS=10V...
Description N-channel High Voltage MOSFET
N-Channel Power Field Effect Transistor

File Size 42.87K  /  4 Page

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    HGTG20N60C3D

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG20N60C3D
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC ...
Description 3.3V 36-mc CPLD
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 120.19K  /  8 Page

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    30KPA360A 30KPA320A 30KPA30A-12 30KPA220A 30KPA300A 30KPA250A

Protek Devices
Part No. 30KPA360A 30KPA320A 30KPA30A-12 30KPA220A 30KPA300A 30KPA250A
OCR Text ...in voltages ranging from 30v to 360v with 5 percent and 10 percent tolerances. both tolerances are referenced to the power supply output or operatng voltage level. this series is compatble with iec 61000-4-5 (surge) requirements. fe a t...
Description 30kW power tvs component

File Size 327.79K  /  5 Page

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    2SK3693-01MR

Fuji Electric
SANYO[Sanyo Semicon Device]
Part No. 2SK3693-01MR
OCR Text ...50V VGS=0V Tch=25C Tch=125C VDS=360V VGS=0V VGS=30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 VCC=225V ID=17A VGS=10V L=1.41mH Tch=25C IF=17A VGS=0V Tch=25C IF=17A VGS=0V -di/dt=100A/s Tch...
Description N-CHANNEL SILICON POWER MOSFET

File Size 104.04K  /  4 Page

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    IRAMY20UP60B

International Rectifier
Part No. IRAMY20UP60B
OCR Text ... 10 --- --- s V+= 360V, VCC=+15V to 0V V+= 360V, VGE=15V VCC=+15V to 0V See CT2 TJ=150C, VP=600V, tSC<10s ICSC Short Circuit Collector Current --140 --A See CT2 Recommended Operating Conditions Driver Function The In...
Description iMOTION Series 20A, 600V

File Size 328.35K  /  16 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VG...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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For 36.0v Found Datasheets File :: 679    Search Time::2.578ms    
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