50v 8a pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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50v 8a Datasheet PDF File

For 50v 8a Found Datasheets File :: 2476 Search Time::1.453ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS16SM-5
OCR Text	...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C DRAIN CURRENT ID (A) 32 24 3 2 100 7 5 3 2 10-1 100 23 5 7 1...
Description	HIGH-SPEED SWITCHING USE
File Size	43.89K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS16SM-6
OCR Text	...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C 3 2 100 7 5 3 2 10-1 100 23 5 7 101 DRAIN CURRENT ID (A) 32 24 ...
Description	HIGH-SPEED SWITCHING USE
File Size	43.55K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSF8N90A
OCR Text	...V,TC=125 C VGS=10V,ID=2.75A VDS=50v,ID=2.75A 4 O* 4 O 2070 2690 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450v,ID=8a, RG=10 See Fig 13 VDS=720V,VGS=10V, ID=8a See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteris...
Description	Advanced Power MOSFET
File Size	248.92K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP65R095C7
OCR Text	... as - - 118 mj i d =8.4a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.59 mj i d =8.4a; v dd =50v; see table 10 avalanche...8a, t j =25c v gs =10v, i d =11.8a, t j =150c gate resistance r g - 0.9 - w f =1mhz,opendrain t...
Description	LED Driver IC and Lighting IC
File Size	1,585.67K / 15 Page	View it Online	Download Datasheet

				TOKO, Inc. Fuji Electric
Part No.	FAP-450
OCR Text	... C T stg -55 ~ +150 C 1) VCC = 50v; L = 7mH; IAS = 14A; RG = 50 ; Starting Tch = 25C (See Fig. 1 & 2) 2) Repetitive Rating : Pulse Width l...8a VGS=10V ID=8a VDS=25V VDS=25V VGS=0V f=1MHz VCC=250v VGS=10V RG = 6,1W RD = 20 Tch=25C L = 100H V...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 14A I(D) \| TO-247VAR 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\|4A条（丁）\|47VAR N-channel MOS-FET(500V, 0,38Ω, 14A, 190W) N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
File Size	221.16K / 3 Page	View it Online	Download Datasheet

				Cystech Electonics Corp...
Part No.	MTB190P10J3
OCR Text	..., 2 - 19.4 29.1 ns v ds =-50v, i d =-1a, v gs =-10v, r g =6 ciss - 742 - coss - 48 - crss - 38 - pf v gs =0v, v ds =...8a, v gs =0v trr - 24.6 36.9 ns qrr - 31 - nc i f =-8a, di f /dt=100a/ s note : *1.puls...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	445.21K / 9 Page	View it Online	Download Datasheet

				SEMIWELL[SemiWell Semiconductor]
Part No.	SFP840
OCR Text	...e 2. L = 18.5mH, IAS =8a, VDD = 50v, RG = 0 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature. Parameter ...
Description	125W Power MOSFET, 500V Vdss, 8a Id, 0.85Om Rds N-Channel MOSFET
File Size	870.98K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPA80R460CE
OCR Text	... as - - 470 mj i d =2.2a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.20 mj i d =2.2a; v dd =50v; see table 10 avalanche...8a, r g =7.5 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =10v, i d =10.8a, r g =7.5 w...
Description	High peak current capability
File Size	1,217.02K / 15 Page	View it Online	Download Datasheet

				KEC(Korea Electronics)
Part No.	KF8N60F KF8N60P
OCR Text	...e 2) l =6.6mh, i s =8a, v dd =50v, r g =25 , starting t j =25 . note 3) i s 8.0a, di/dt 200a/ , v dd bv dss , starting t j =25 . note 4) pulse test : pulse width 300 , duty cycle 2%. note 5) essentially independent of operating te...
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
File Size	76.96K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW614B IRFI614B IRFI614BTUFP001 IRFW614BTMFP001
OCR Text	...2. L = 9.2mH, IAS = 2.8a, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 2.8a, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fai...
Description	250v N-Channel B-FET / Substitute of IRFW614A 250v N-Channel MOSFET 250v N-Channel B-FET / Substitute of IRFI614A
File Size	646.54K / 9 Page	View it Online	Download Datasheet

For 50v 8a Found Datasheets File :: 2476 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |